Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALOX5 | P09917 | 1/20 | 0.35 |
| ▸ | PTGS2 | P35354 | 1/20 | 0.35 |
| ▸ | CYSLTR2 | Q9NS75 | 9/20 | 0.34 |
| ▸ | CYSLTR1 | Q9Y271 | 9/20 | 0.34 |
| ▸ | LIPG | Q9Y5X9 | 1/20 | 0.32 |
| ▸ | PPARA | Q07869 | 2/20 | 0.31 |
| ▸ | BID | P55957 | 3/20 | 0.31 |
| ▸ | MCL1 | Q07820 | 3/20 | 0.31 |
| ▸ | BCL2L1 | Q07817 | 2/20 | 0.31 |
| ▸ | BAK1 | Q16611 | 2/20 | 0.31 |
| ▸ | KAT8 | Q9H7Z6 | 2/20 | 0.31 |
| ▸ | PPARG | P37231 | 1/20 | 0.31 |
| ▸ | EP300 | Q09472 | 1/20 | 0.31 |
| ▸ | KAT2A | Q92830 | 1/20 | 0.31 |
| ▸ | KAT2B | Q92831 | 1/20 | 0.31 |
| ▸ | KAT5 | Q92993 | 1/20 | 0.31 |
| ▸ | SAE1 | Q9UBE0 | 1/20 | 0.31 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.31 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.31 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL702997 | 0.90 | CYSLTR2 (0.35) | ALOX5PTGS2CYSLTR2CYSLTR1LIPG | |
| SCHEMBL708504 | 0.88 | ADRA2A (0.33) | — | |
| SCHEMBL704445 | 0.86 | CYSLTR2 (0.40) | ALOX5PTGS2CYSLTR2CYSLTR1LIPG | |
| SCHEMBL705823 | 0.83 | ALOX5 (0.36) | ALOX5PTGS2CYSLTR2CYSLTR1LIPG | |
| SCHEMBL3482257 | 0.81 | CYSLTR2 (0.46) | ALOX5PTGS2CYSLTR2CYSLTR1LIPG | |
| SCHEMBL706646 | 0.78 | GABRA1 (0.35) | — | |
| SCHEMBL28333255 | 0.78 | TSHR (0.43) | ALOX5PTGS2CYSLTR2CYSLTR1LIPG | |
| SCHEMBL30159313 | 0.77 | GABRA1 (0.47) | ALOX5PTGS2CYSLTR2CYSLTR1LIPG | |
| SCHEMBL28354022 | 0.77 | GABRA1 (0.47) | ALOX5PTGS2CYSLTR2CYSLTR1LIPG | |
| SCHEMBL706397 | 0.77 | ADRA2A (0.35) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |