SCHEMBL7096982

SCHEMBL7096982

C[SiH](C)Oc1cc(CCl)ccc1CCl

nearest known ligand 0.39

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
TTR P02766 3/20 0.39
CA2 P00918 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4360305 0.75 IDO1 (0.34) CA2
SCHEMBL4331816 0.74 CSNK2A1 (0.49) TTR
SCHEMBL28520052 0.70 CA1 (0.34) TTRCA2
SCHEMBL11838721 0.69 CA2 (0.61) TTRCA2
SCHEMBL3700915 0.68 CA1 (0.34) TTRCA2
SCHEMBL29587349 0.68 CA1 (0.34) TTRCA2
SCHEMBL31435284 0.68 PTGS2 (0.48) TTRCA2
SCHEMBL6914100 0.67 ESR1 (0.37) TTRCA2
SCHEMBL28204423 0.67 TTR (0.34) TTRCA2
SCHEMBL5598123 0.67 TTR (0.54) TTRCA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6656855-B2 Deposition method of dielectric films having a low dielectric constant STMICROELECTRONICS S.R.L. (IT) 2003-12-02 US disclosed
US-20030171004-A1 Deposition method of dielecrtric films having a low dielectric constant STMICROELECTRONICS S.R.I. 2003-09-11 US disclosed
US-6551949-B2 Vapor deposition; overcoating semiconductor substrate STMICROELECTRONICS S.R.L. (IT) 2003-04-22 US disclosed
US-20020004139-A1 Deposition method of dielectric films having a low dielectric constant STMICROELECTRONICS S.R.L. (IT) 2002-01-10 US disclosed
EP-1149933-A1 Deposition method of dielectric films having a low dielectric constant STMicroelectronics S.r.l. (IT) 2001-10-31 EP disclosed