SCHEMBL711378

SCHEMBL711378

CC(C)[Si](F)(F)c1ccccc1

nearest known ligand 0.35

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 1/20 0.34
ESR2 Q92731 1/20 0.34
TDP1 Q9NUW8 1/20 0.33
NR1H2 P55055 2/20 0.32
NR1H3 Q13133 2/20 0.32
AOC3 Q16853 1/20 0.32
TAAR1 Q96RJ0 4/20 0.31
SLC6A2 P23975 2/20 0.31
LMNA P02545 2/20 0.31
MAOA P21397 1/20 0.31
SLC6A4 P31645 1/20 0.31
SLC6A3 Q01959 1/20 0.31
SIGMAR1 Q99720 1/20 0.31
CYP2A6 P11509 1/20 0.31
ADORA2A P29274 1/20 0.31
ADORA1 P30542 1/20 0.31
TSHR P16473 1/20 0.30
ALOX12 P18054 1/20 0.30
ACHE P22303 1/20 0.30
TRPA1 O75762 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703513 0.86 NR1H2 (0.30) NR1H2NR1H3
SCHEMBL708624 0.79 CYP2D6 (0.34) ESR1ESR2TDP1NR1H2NR1H3
SCHEMBL705454 0.79 TDP1 (0.39) ESR1ESR2TDP1NR1H2NR1H3
SCHEMBL24624088 0.75 ESR1 (0.32) ESR1ESR2TDP1NR1H2NR1H3
SCHEMBL1538902 0.75 AOC3 (0.34) ESR1ESR2TDP1NR1H2NR1H3
SCHEMBL706818 0.74 MAOA (0.36) ESR1ESR2TDP1NR1H2NR1H3
SCHEMBL705425 0.74 ESR1 (0.34) ESR1ESR2TDP1AOC3TAAR1
SCHEMBL9763717 0.72 ESR1 (0.37) ESR1ESR2TDP1TAAR1SLC6A2
SCHEMBL13766348 0.72 ESR1 (0.37) ESR1ESR2TDP1TAAR1SLC6A2
SCHEMBL5180601 0.72 ESR1 (0.37) ESR1ESR2TDP1TAAR1SLC6A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed