Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.39 |
| ▸ | ESR1 | P03372 | 1/20 | 0.34 |
| ▸ | ESR2 | Q92731 | 1/20 | 0.34 |
| ▸ | KCNH3 | Q9ULD8 | 2/20 | 0.33 |
| ▸ | LMNA | P02545 | 2/20 | 0.33 |
| ▸ | TSHR | P16473 | 2/20 | 0.33 |
| ▸ | ALOX12 | P18054 | 2/20 | 0.33 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.33 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.33 |
| ▸ | THRB | P10828 | 1/20 | 0.33 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.33 |
| ▸ | RECQL | P46063 | 1/20 | 0.33 |
| ▸ | ATM | Q13315 | 1/20 | 0.33 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.33 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.33 |
| ▸ | NR1H2 | P55055 | 2/20 | 0.32 |
| ▸ | NR1H3 | Q13133 | 2/20 | 0.32 |
| ▸ | AOC3 | Q16853 | 1/20 | 0.32 |
| ▸ | ELANE | P08246 | 1/20 | 0.32 |
| ▸ | TAAR1 | Q96RJ0 | 4/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL711378 | 0.79 | ESR1 (0.34) | TDP1ESR1ESR2LMNATSHR | |
| SCHEMBL708624 | 0.79 | CYP2D6 (0.34) | TDP1ESR1ESR2LMNATSHR | |
| SCHEMBL24624088 | 0.75 | ESR1 (0.32) | TDP1ESR1ESR2NR1H2NR1H3 | |
| SCHEMBL1538902 | 0.75 | AOC3 (0.34) | TDP1ESR1ESR2NR1H2NR1H3 | |
| SCHEMBL706818 | 0.74 | MAOA (0.36) | TDP1ESR1ESR2LMNAALDH1A1 | |
| SCHEMBL9763717 | 0.72 | ESR1 (0.37) | TDP1ESR1ESR2LMNATSHR | |
| SCHEMBL985723 | 0.72 | ESR1 (0.37) | TDP1ESR1ESR2LMNATSHR | |
| SCHEMBL13766348 | 0.72 | ESR1 (0.37) | TDP1ESR1ESR2LMNATSHR | |
| SCHEMBL5180601 | 0.72 | ESR1 (0.37) | TDP1ESR1ESR2LMNATSHR | |
| SCHEMBL14959333 | 0.70 | ESR1 (0.41) | TDP1ESR1ESR2LMNATSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11367902-B2 | Lithium secondary battery including electrolyte containing monofluorosilane compound | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2022-06-21 | — | — | US | disclosed |
| US-10547085-B2 | Lithium secondary battery including electrolyte containing monofluorosilane compound | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2020-01-28 | — | — | US | disclosed |
| US-20180219258-A1 | LITHIUM SECONDARY BATTERY INCLUDING ELECTROLYTE CONTAINING MONOFLUOROSILANE COMPOUND | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2018-08-02 | — | — | US | disclosed |
| US-20180219258-A1 | LITHIUM SECONDARY BATTERY INCLUDING ELECTROLYTE CONTAINING MONOFLUOROSILANE COMPOUND | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2018-08-02 | — | — | US | disclosed |
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |