SCHEMBL711563

SCHEMBL711563

CC(C)(C)c1cccc(-c2ccccc2O[SiH3])c1C(C)(C)C

nearest known ligand 0.35

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA2 P00918 1/20 0.35
ALDH1A1 P00352 5/20 0.34
TDP1 Q9NUW8 2/20 0.34
TSHR P16473 1/20 0.34
ATM Q13315 1/20 0.33
BCHE P06276 1/20 0.33
CYP1A2 P05177 1/20 0.33
CYP2D6 P10635 1/20 0.33
CYP2C19 P33261 1/20 0.33
HSD17B10 Q99714 1/20 0.33
GABRA1 P14867 1/20 0.32
GABRB2 P47870 1/20 0.32
KDM4E B2RXH2 3/20 0.31
GAA P10253 1/20 0.31
RXRA P19793 1/20 0.31
RXRB P28702 1/20 0.31
RXRG P48443 1/20 0.31
KIF11 P52732 1/20 0.31
NISCH Q9Y2I1 1/20 0.31
MAPT P10636 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706108 0.85 ALDH1A1 (0.39) CA2ALDH1A1TDP1TSHRATM
SCHEMBL28426083 0.83 CA2 (0.41) CA2ALDH1A1TDP1TSHRATM
SCHEMBL4461655 0.81 CA2 (0.50) CA2ALDH1A1TDP1TSHRCYP1A2
SCHEMBL20696116 0.79 NPSR1 (0.35) CA2ALDH1A1TDP1TSHRATM
SCHEMBL1156973 0.79 TDP1 (0.43) CA2ALDH1A1TDP1TSHRATM
SCHEMBL1156978 0.78 ATM (0.46) CA2ALDH1A1TDP1ATMBCHE
SCHEMBL705017 0.77 ALDH1A1 (0.44) CA2ALDH1A1TDP1TSHRATM
SCHEMBL544837 0.76 BCHE (0.32) CA2ALDH1A1TDP1TSHRATM
SCHEMBL20696119 0.76 INPPL1 (0.45) CA2ALDH1A1TDP1ATMBCHE
SCHEMBL27524063 0.74 CA2 (0.40) CA2ALDH1A1TDP1TSHRGABRA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed