SCHEMBL706108

SCHEMBL706108

CC(C)(C)c1ccccc1-c1ccccc1O[SiH3]

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 5/20 0.39
TDP1 Q9NUW8 3/20 0.39
TSHR P16473 1/20 0.39
ATM Q13315 1/20 0.37
CYP1A2 P05177 1/20 0.36
CYP2D6 P10635 1/20 0.36
CYP2C19 P33261 1/20 0.36
HSD17B10 Q99714 1/20 0.36
BCHE P06276 1/20 0.36
CA2 P00918 1/20 0.35
KDM4E B2RXH2 3/20 0.34
GAA P10253 1/20 0.34
RXRA P19793 1/20 0.34
RXRB P28702 1/20 0.34
RXRG P48443 1/20 0.34
TRPA1 O75762 1/20 0.34
NISCH Q9Y2I1 1/20 0.33
MAPT P10636 1/20 0.33
NPSR1 Q6W5P4 2/20 0.32
NAMPT P43490 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL711563 0.85 CA2 (0.35) ALDH1A1TDP1TSHRATMCYP1A2
SCHEMBL705017 0.83 ALDH1A1 (0.44) ALDH1A1TDP1TSHRATMCYP1A2
SCHEMBL12203538 0.82 APP (0.48) ALDH1A1TDP1TSHRCYP1A2HSD17B10
SCHEMBL1194484 0.80 ALDH1A1 (0.55) ALDH1A1TDP1TSHRATMCYP1A2
Phosphine SCHEMBL2238711 0.78 ALDH1A1 (0.52) ALDH1A1TDP1TSHRATMCYP1A2
SCHEMBL545684 0.78 ALDH1A1 (0.52) ALDH1A1TDP1TSHRATMCYP1A2
SCHEMBL1157030 0.76 TDP1 (0.47) ALDH1A1TDP1TSHRATMHSD17B10
SCHEMBL11020611 0.75 ALDH1A1 (0.50) ALDH1A1TDP1TSHRATMCYP1A2
SCHEMBL1157034 0.74 TDP1 (0.50) ALDH1A1TDP1TSHRATMBCHE
SCHEMBL28426083 0.73 CA2 (0.41) ALDH1A1TDP1TSHRATMCYP1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed