SCHEMBL712038

SCHEMBL712038

CC(C)c1cccc(-c2ccccc2O[SiH3])c1C(C)C

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GABRA1 P14867 3/20 0.35
LMNA P02545 3/20 0.35
GABRB2 P47870 2/20 0.35
CYP1A2 P05177 2/20 0.35
CYP3A4 P08684 2/20 0.35
GABRG2 P18507 2/20 0.35
GABRB3 P28472 2/20 0.35
CA1 P00915 2/20 0.35
CA2 P00918 2/20 0.35
FAAH O00519 1/20 0.35
HPGD P15428 1/20 0.35
TSHR P16473 1/20 0.35
GABRB1 P18505 1/20 0.35
PTGS1 P23219 1/20 0.35
SLC6A2 P23975 1/20 0.35
HTR2C P28335 1/20 0.35
GABRA5 P31644 1/20 0.35
GABRA3 P34903 1/20 0.35
HTR2B P41595 1/20 0.35
GABRA2 P47869 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704956 0.85 GABRA1 (0.39) GABRA1LMNAGABRB2CYP1A2CYP3A4
SCHEMBL21059257 0.83 GABRA1 (0.41) GABRA1LMNAGABRB2CYP1A2CYP3A4
SCHEMBL8761362 0.81 GABRA1 (0.50) GABRA1LMNAGABRB2CYP1A2CYP3A4
Hydrochloric Acid SCHEMBL15609199 0.80 GABRA1 (0.41) GABRA1LMNAGABRB2CYP1A2CYP3A4
SCHEMBL11341 0.79 GABRA1 (0.44) GABRA1LMNAGABRB2CYP1A2CYP3A4
SCHEMBL705071 0.77 GABRA1 (0.44) GABRA1LMNAGABRB2CYP1A2CYP3A4
SCHEMBL8043769 0.73 ALDH1A1 (0.50) GABRA1LMNAGABRB2CYP1A2CYP3A4
SCHEMBL29769741 0.73 CA1 (0.41) GABRA1LMNAGABRB2CYP1A2CYP3A4
SCHEMBL8142318 0.73 CA1 (0.41) GABRA1LMNAGABRB2CYP1A2CYP3A4
SCHEMBL1841574 0.73 GABRA1 (0.57) GABRA1LMNAGABRB2CYP1A2CYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed