SCHEMBL712057

SCHEMBL712057

CCO[Si](OCC)(c1ccccc1)c1ccc([Si](OCC)(OCC)c2ccccc2)cc1

nearest known ligand 0.37

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 1/20 0.37
ESR2 Q92731 1/20 0.37
LTA4H P09960 1/20 0.35
TP53 P04637 2/20 0.35
PIN1 Q13526 2/20 0.33
MAPT P10636 1/20 0.33
HTT P42858 1/20 0.32
RELA Q04206 1/20 0.32
NPSR1 Q6W5P4 1/20 0.32
ALDH1A1 P00352 2/20 0.32
KDM4E B2RXH2 1/20 0.32
NPC1 O15118 1/20 0.32
HPGD P15428 1/20 0.32
RAB9A P51151 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
TSHR P16473 1/20 0.32
L3MBTL1 Q9Y468 2/20 0.31
KCNH2 Q12809 1/20 0.31
GLA P06280 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL34937 0.98 LTA4H (0.37) ESR1ESR2LTA4HTP53PIN1
SCHEMBL28187676 0.95 LTA4H (0.35) ESR1ESR2LTA4HTP53PIN1
Phosphine SCHEMBL23931373 0.95 LTA4H (0.35) ESR1ESR2LTA4HTP53PIN1
SCHEMBL3481554 0.92 LMNA (0.39) ESR1ESR2PIN1MAPTHTT
SCHEMBL5017365 0.90 MAOB (0.41) MAPTHTTALDH1A1KDM4ENPC1
SCHEMBL3482705 0.90 TP53 (0.48) TP53MAPTRELAALDH1A1KDM4E
SCHEMBL29193035 0.89 SMN1; SMN2 (0.40) TP53MAPTALDH1A1KDM4ENPC1
SCHEMBL6046631 0.89 TSHR (0.33) LTA4HTP53PIN1MAPTHTT
SCHEMBL28133626 0.89 MAPT (0.34) ESR1ESR2LTA4HTP53PIN1
SCHEMBL28100760 0.89 LTA4H (0.32) LTA4HTP53PIN1MAPTHTT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
EP-0641820-B1 Organosilicon polymer and process for the preparation thereof TOSHIBA SILICONE (JP) 1998-08-12 EP disclosed