SCHEMBL3481554

SCHEMBL3481554

CCO[Si](OCC)(c1ccccc1)c1ccc(C)cc1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.39
TSHR P16473 1/20 0.39
ALOX12 P18054 1/20 0.39
ACHE P22303 1/20 0.39
HPGD P15428 2/20 0.34
NPC1 O15118 2/20 0.33
RAB9A P51151 2/20 0.33
PIN1 Q13526 2/20 0.33
SMN1; SMN2 Q16637 2/20 0.33
POLB P06746 2/20 0.33
MAPT P10636 1/20 0.33
TDP1 Q9NUW8 1/20 0.33
HTT P42858 1/20 0.33
MEN1 O00255 1/20 0.33
KMT2A Q03164 1/20 0.33
GABRA2 P47869 1/20 0.33
GABRB2 P47870 1/20 0.33
CYP2C19 P33261 1/20 0.33
NFKB1 P19838 1/20 0.33
NFKB2 Q00653 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL712057 0.92 ESR1 (0.37) TSHRHPGDNPC1RAB9APIN1
SCHEMBL296972 0.92 ACHE (0.38) ACHENPC1RAB9ASMN1; SMN2POLB
SCHEMBL34937 0.89 LTA4H (0.37) TSHRHPGDNPC1RAB9APIN1
Phosphine SCHEMBL23931373 0.87 LTA4H (0.35) TSHRHPGDNPC1RAB9APIN1
SCHEMBL28187676 0.87 LTA4H (0.35) TSHRHPGDNPC1RAB9APIN1
SCHEMBL3482226 0.85 TACR1 (0.33) LMNATSHRALOX12ACHENPC1
SCHEMBL3481473 0.85 LMNA (0.36) LMNATSHRALOX12ACHEHPGD
SCHEMBL3482014 0.84 HPGD (0.39) LMNATSHRALOX12ACHEHPGD
SCHEMBL5017365 0.82 MAOB (0.41) LMNATSHRNPC1RAB9ASMN1; SMN2
SCHEMBL3482705 0.82 TP53 (0.48) LMNANPC1RAB9ASMN1; SMN2POLB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed