SCHEMBL3482705

SCHEMBL3482705

CCO[Si](OCC)(c1ccccc1)c1ccc(CC)cc1

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TP53 P04637 1/20 0.48
CYP1A2 P05177 2/20 0.39
CYP2A6 P11509 1/20 0.39
RAB9A P51151 5/20 0.39
NPC1 O15118 3/20 0.39
SMN1; SMN2 Q16637 3/20 0.39
L3MBTL1 Q9Y468 2/20 0.39
ALDH1A1 P00352 2/20 0.39
LMNA P02545 1/20 0.39
MAPT P10636 1/20 0.39
MAPK1 P28482 1/20 0.39
ALOX15B O15296 1/20 0.36
CYP3A4 P08684 1/20 0.36
GAA P10253 1/20 0.36
CYP2D6 P10635 1/20 0.36
CYP2C9 P11712 1/20 0.36
CYP2C19 P33261 1/20 0.36
PPARG P37231 1/20 0.35
PPARA Q07869 1/20 0.35
KDM4E B2RXH2 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL712057 0.90 ESR1 (0.37) TP53RAB9ANPC1SMN1; SMN2L3MBTL1
SCHEMBL34937 0.88 LTA4H (0.37) TP53RAB9ANPC1SMN1; SMN2L3MBTL1
Phosphine SCHEMBL23931373 0.86 LTA4H (0.35) TP53RAB9ANPC1SMN1; SMN2L3MBTL1
SCHEMBL28187676 0.86 LTA4H (0.35) TP53RAB9ANPC1SMN1; SMN2L3MBTL1
SCHEMBL3482334 0.85 TP53 (0.45) TP53CYP1A2CYP2A6RAB9ANPC1
SCHEMBL3482491 0.85 TP53 (0.48) TP53CYP1A2CYP2A6RAB9ANPC1
SCHEMBL3481554 0.82 LMNA (0.39) RAB9ANPC1SMN1; SMN2LMNAMAPT
SCHEMBL3482008 0.82 TP53 (0.50) TP53CYP1A2CYP2A6RAB9ANPC1
SCHEMBL5017365 0.81 MAOB (0.41) CYP1A2RAB9ANPC1SMN1; SMN2L3MBTL1
SCHEMBL6046631 0.80 TSHR (0.33) TP53MAPTGAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed