Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | BACE1 | P56817 | 1/20 | 0.51 |
| ▸ | CA1 | P00915 | 2/20 | 0.49 |
| ▸ | CA2 | P00918 | 2/20 | 0.49 |
| ▸ | CA9 | Q16790 | 2/20 | 0.49 |
| ▸ | NFE2L2 | Q16236 | 2/20 | 0.47 |
| ▸ | PPARG | P37231 | 1/20 | 0.47 |
| ▸ | CA4 | P22748 | 1/20 | 0.43 |
| ▸ | KCNH2 | Q12809 | 1/20 | 0.43 |
| ▸ | LTA4H | P09960 | 1/20 | 0.42 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.42 |
| ▸ | GAA | P10253 | 1/20 | 0.42 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.42 |
| ▸ | HTT | P42858 | 1/20 | 0.41 |
| ▸ | HDAC4 | P56524 | 1/20 | 0.41 |
| ▸ | HDAC2 | Q92769 | 1/20 | 0.41 |
| ▸ | HDAC8 | Q9BY41 | 1/20 | 0.41 |
| ▸ | CXCR2 | P25025 | 1/20 | 0.41 |
| ▸ | PKM | P14618 | 1/20 | 0.41 |
| ▸ | NPC1 | O15118 | 1/20 | 0.41 |
| ▸ | RAB9A | P51151 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Biphenyl SCHEMBL115843 | 0.98 | BACE1 (0.53) | BACE1CA1CA2CA9NFE2L2 | |
| Biphenyl SCHEMBL4512202 | 0.97 | BACE1 (0.51) | BACE1CA1CA2CA9NFE2L2 | |
| Hydrogen Sulfide SCHEMBL5082548 | 0.91 | CA1 (0.55) | BACE1CA1CA2CA9NFE2L2 | |
| SCHEMBL1997269 | 0.89 | CA1 (0.57) | BACE1CA1CA2CA9NFE2L2 | |
| SCHEMBL24360466 | 0.87 | CA2 (0.62) | BACE1CA1CA2CA9KMT2A | |
| Iodide SCHEMBL1859836 | 0.87 | CA1 (0.55) | BACE1CA1CA2CA9NFE2L2 | |
| SCHEMBL5532552 | 0.87 | CA2 (0.62) | BACE1CA1CA2CA9KMT2A | |
| Biphenyl SCHEMBL709602 | 0.86 | CA2 (0.49) | CA1CA2CA9PPARGSMN1; SMN2 | |
| Biphenyl SCHEMBL28551760 | 0.85 | CA1 (0.53) | CA1CA2CA9NFE2L2PPARG | |
| Trifluoromethanesulfonic Acid SCHEMBL27925853 | 0.85 | BACE1 (0.50) | BACE1KCNH2HDAC4HDAC2HDAC8 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 81 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2026107261-A1 | PURIFICATION OF PHOTORESIST POLYMER BY SURFACE-MODIFIED POROUS POLYETHYLENE MEMBRANE | ENTEGRIS, INC. (US) | 2026-05-21 | — | — | WO | claimed |
| CN-114193896-A | Thermochromic film and preparation method and application thereof | 广州光驭超材料有限公司 | 2022-03-18 | — | — | CN | claimed |
| US-7994050-B2 | Method for forming dual damascene pattern | HYNIX SEMICONDUCTOR INC. (KR) | 2011-08-09 | — | — | US | claimed |
| US-20100311239-A1 | Method for forming dual damascene pattern | LEE KI LYOUNG | 2010-12-09 | — | — | US | claimed |
| US-7811929-B2 | Method for forming dual damascene pattern | HYNIX SEMICONDUCTOR, INC. (KR) | 2010-10-12 | — | — | US | claimed |
| US-7449538-B2 | Hard mask composition and method for manufacturing semiconductor device | HYNIX SEMICONDUCTOR INC. (KR) | 2008-11-11 | — | — | US | claimed |
| US-20080268641-A1 | Method for forming dual damascene pattern | HYNIX SEMICONDUCTOR INC. | 2008-10-30 | — | — | US | claimed |
| US-20070154838-A1 | Hard Mask Composition and Method for Manufacturing Semiconductor Device | HYNIX SEMICONDUCTOR INC. (KR) | 2007-07-05 | — | — | US | claimed |
| WO-2026107261-A1 | PURIFICATION OF PHOTORESIST POLYMER BY SURFACE-MODIFIED POROUS POLYETHYLENE MEMBRANE | ENTEGRIS, INC. (US) | 2026-05-21 | — | — | WO | disclosed |
| CN-117866135-B | Self-crosslinking polymer and bottom anti-reflection coating composition as well as preparation method and application thereof | 厦门恒坤新材料科技股份有限公司 | 2025-01-24 | — | — | CN | disclosed |
| CN-114341215-B | Curable composition | 株式会社日本触媒 | 2024-12-27 | — | — | CN | disclosed |
| CN-118930721-A | Bottom anti-reflection film resin and composition, preparation method and pattern forming method thereof | 厦门恒坤新材料科技股份有限公司 | 2024-11-12 | — | — | CN | disclosed |
| CN-118818901-A | KrF negative photoresist and preparation method and patterning forming method thereof | 厦门恒坤新材料科技股份有限公司 | 2024-10-22 | — | — | CN | disclosed |
| CN-116082914-B | Organic anti-reflection coating composition, preparation method thereof and pattern forming method | 厦门恒坤新材料科技股份有限公司 | 2024-04-30 | — | — | CN | disclosed |
| US-7449538-B2 | Hard mask composition and method for manufacturing semiconductor device | HYNIX SEMICONDUCTOR INC. (KR) | 2008-11-11 | — | — | US | disclosed |
| US-20080268641-A1 | Method for forming dual damascene pattern | HYNIX SEMICONDUCTOR INC. | 2008-10-30 | — | — | US | disclosed |
| CN-101059652-A | Photocurable resin composition | DONGJIN SEMICHEM CO LTD (KR) | 2007-10-24 | — | — | CN | disclosed |
| US-20070154838-A1 | Hard Mask Composition and Method for Manufacturing Semiconductor Device | HYNIX SEMICONDUCTOR INC. (KR) | 2007-07-05 | — | — | US | disclosed |
| US-20070148585-A1 | Hyperbranched polymer, production method therefor and resist composition containing hyperbranched polymer | LION CORPORATION. | 2007-06-28 | — | — | US | disclosed |
| EP-1698645-A1 | HYPERBRANCHED POLYMER, PROCESS FOR PRODUCING THE SAME AND RESIST COMPOSITION CONTAINING THE HYPERBRANCHED POLYMER | Lion Corporation (JP) | 2006-09-06 | — | — | EP | disclosed |