Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ELANE | P08246 | 5/20 | 0.55 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.53 |
| ▸ | LMNA | P02545 | 4/20 | 0.52 |
| ▸ | MEN1 | O00255 | 2/20 | 0.47 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.47 |
| ▸ | ESR1 | P03372 | 1/20 | 0.47 |
| ▸ | PGR | P06401 | 1/20 | 0.47 |
| ▸ | CHRM2 | P08172 | 1/20 | 0.47 |
| ▸ | ADORA3 | P0DMS8 | 1/20 | 0.47 |
| ▸ | AR | P10275 | 1/20 | 0.47 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.47 |
| ▸ | SLC6A2 | P23975 | 1/20 | 0.47 |
| ▸ | SLC6A3 | Q01959 | 1/20 | 0.47 |
| ▸ | MAPT | P10636 | 4/20 | 0.47 |
| ▸ | POLB | P06746 | 2/20 | 0.47 |
| ▸ | PKM | P14618 | 2/20 | 0.47 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.46 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.46 |
| ▸ | TTR | P02766 | 1/20 | 0.46 |
| ▸ | TP53 | P04637 | 1/20 | 0.46 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14903558 | 0.83 | ELANE (0.56) | ELANEHSD17B10LMNAMEN1KMT2A | |
| SCHEMBL28705673 | 0.80 | THRB (0.59) | ELANEHSD17B10LMNAMEN1KMT2A | |
| SCHEMBL1088052 | 0.80 | LMNA (0.65) | ELANEHSD17B10LMNAMEN1KMT2A | |
| SCHEMBL29261849 | 0.80 | ELANE (0.53) | ELANEHSD17B10LMNAMEN1KMT2A | |
| SCHEMBL13618052 | 0.78 | MAPT (0.53) | HSD17B10LMNAESR1ADORA3MAPT | |
| SCHEMBL9339013 | 0.78 | ELANE (0.83) | ELANEHSD17B10LMNAMEN1KMT2A | |
| SCHEMBL269329 | 0.77 | LMNA (0.80) | ELANEHSD17B10LMNAMEN1KMT2A | |
| SCHEMBL1089254 | 0.76 | ELANE (0.62) | ELANEHSD17B10LMNAMEN1KMT2A | |
| SCHEMBL4902491 | 0.76 | ELANE (0.53) | ELANEHSD17B10LMNAMEN1KMT2A | |
| SCHEMBL5831549 | 0.76 | ELANE (0.67) | ELANEHSD17B10LMNAMEN1KMT2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 108 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-121586750-A | Composition for forming silicon-containing underlayer film for directional self-assembly | 日产化学株式会社 | 2026-02-27 | — | — | CN | disclosed |
| US-20250206901-A1 | BRUSH MATERIAL FOR SELF-ASSEMBLED FILM | NISSAN CHEMICAL CORPORATION (JP) | 2025-06-26 | — | — | US | disclosed |
| CN-120019330-A | Underlying film material for self-assembled materials | 日产化学株式会社 | 2025-05-16 | — | — | CN | disclosed |
| US-20250147413-A1 | METHOD FOR PRODUCING STRUCTURE HAVING PHASE-SEPARATED STRUCTURE | TOKYO OHKA KOGYO CO., LTD. (JP) | 2025-05-08 | — | — | US | disclosed |
| US-20250101145-A1 | BLOCK COPOLYMERS AND METHODS OF MANUFACTURING INTEGRATED CIRCUIT DEVICES USING THE SAME | KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (KR) | 2025-03-27 | — | — | US | disclosed |
| WO-2025047871-A1 | UNDERLAYER FILM MATERIAL FOR SELF-ASSEMBLED MATERIALS | 日産化学株式会社 | 2025-03-06 | — | — | WO | disclosed |
| WO-2025041813-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING UNDERLAYER FILM FOR INDUCED SELF-ASSEMBLY | 日産化学株式会社 | 2025-02-27 | — | — | WO | disclosed |
| US-20250011616-A1 | METHOD FOR PRODUCING STRUCTURE BODY INCLUDING PHASE-SEPARATED STRUCTURE, AND COMPOSITION | TOKYO OHKA KOGYO CO LTD (JP) | 2025-01-09 | — | — | US | disclosed |
| US-20250011622-A1 | BLOCK COPOLYMER, UNDERCOAT AGENT, RESIN COMPOSITION FOR FORMING PHASE-SEPARATED STRUCTURE, AND METHOD FOR PRODUCING STRUCTURE BODY INCLUDING PHASE-SEPARATED STRUCTURE | TOKYO OHKA KOGYO CO LTD (JP) | 2025-01-09 | — | — | US | disclosed |
| US-20240425694-A1 | RESIN COMPOSITION FOR FORMING PHASE-SEPARATED STRUCTURE, AND METHOD FOR PRODUCING STRUCTURE BODY INCLUDING PHASE-SEPARATED STRUCTURE | TOKYO OHKA KOGYO CO., LTD. (JP) | 2024-12-26 | — | — | US | disclosed |
| US-20140234589-A1 | METHODS OF PATTERNING BLOCK COPOLYMER LAYERS AND PATTERNED STRUCTURES | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2014-08-21 | — | — | US | disclosed |
| US-20140193614-A1 | METHOD OF PATTERNING BLOCK COPOLYMER LAYER AND PATTERNED STRUCTURE | Yonsei University, University - Industry Foundation(UIF) (KR) | 2014-07-10 | — | — | US | disclosed |
| US-20140187054-A1 | METHODS OF PATTERNING BLOCK COPOLYMER LAYERS | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2014-07-03 | — | — | US | disclosed |
| US-20140127626-A1 | RESIST COMPOSITION FOR NEGATIVE DEVELOPMENT WHICH IS USED FOR FORMATION OF GUIDE PATTERN, GUIDE PATTERN FORMATION METHOD, AND METHOD FOR FORMING PATTERN ON LAYER CONTAINING BLOCK COPOLYMER | RIKEN (JP) | 2014-05-08 | — | — | US | disclosed |
| US-20140113236-A1 | SOLVENT DEVELOPABLE NEGATIVE RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, AND METHOD FOR FORMING PATTERN OF LAYER INCLUDING BLOCK COPOLYMER | RIKEN (JP) | 2014-04-24 | — | — | US | disclosed |
| US-20140030652-A1 | PRIMER AND PATTERN FORMING METHOD FOR LAYER INCLUDING BLOCK COPOLYMER | RIKEN (JP) | 2014-01-30 | — | — | US | disclosed |
| US-20130313223-A1 | METHOD FOR PRODUCING SUBSTRATE HAVING SURFACE NANOSTRUCTURE | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-11-28 | — | — | US | disclosed |
| US-20130240481-A1 | BLOCK COPOLYMER-CONTAINING COMPOSITION AND METHOD OF REDUCING PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-09-19 | — | — | US | disclosed |
| US-20130210231-A1 | METHOD OF FORMING CONTACT HOLE PATTERN | RIKEN (JP) | 2013-08-15 | — | — | US | disclosed |
| US-20120048738-A1 | SUBSTRATE PROVIDED WITH METAL NANOSTRUCTURE ON SURFACE THEREOF AND METHOD OF PRODUCING THE SAME | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-03-01 | — | — | US | disclosed |