Predicted protein targets (top 4)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.39 |
| ▸ | LMNA | P02545 | 1/20 | 0.39 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.39 |
| ▸ | TSHR | P16473 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL838934 | 0.91 | ALDH1A1 (0.42) | ALDH1A1LMNAHSD17B10TSHR | |
| SCHEMBL839014 | 0.91 | ALDH1A1 (0.42) | ALDH1A1LMNAHSD17B10TSHR | |
| SCHEMBL3910859 | 0.88 | ALDH1A1 (0.40) | ALDH1A1LMNAHSD17B10TSHR | |
| SCHEMBL3912974 | 0.88 | ALDH1A1 (0.40) | ALDH1A1LMNAHSD17B10TSHR | |
| SCHEMBL16616580 | 0.84 | ALDH1A1 (0.37) | ALDH1A1LMNAHSD17B10TSHR | |
| SCHEMBL10794628 | 0.80 | ALDH1A1 (0.37) | ALDH1A1LMNAHSD17B10TSHR | |
| SCHEMBL728864 | 0.76 | ALDH1A1 (0.42) | ALDH1A1LMNAHSD17B10TSHR | |
| SCHEMBL28085493 | 0.74 | ALDH1A1 (0.40) | ALDH1A1LMNAHSD17B10TSHR | |
| SCHEMBL63651 | 0.74 | ALDH1A1 (0.41) | ALDH1A1LMNAHSD17B10TSHR | |
| SCHEMBL211737 | 0.74 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 49 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2412011-B1 | CHEMICAL VAPOR DEPOSITION METHOD | TOKYO ELECTRON LTD (JP) | 2017-09-20 | — | — | EP | claimed |
| US-9212420-B2 | Chemical vapor deposition method | TOKYO ELECTRON LIMITED (JP) | 2015-12-15 | — | — | US | claimed |
| US-20100247803-A1 | Chemical vapor deposition method | TOKYO ELECTRON LIMITED (JP) | 2010-09-30 | — | — | US | claimed |
| CN-101441415-A | Antireflective coatings | AIR PROD & CHEM (US) | 2009-05-27 | — | — | CN | claimed |
| US-20090096106-A1 | ANTIREFLECTIVE COATINGS | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2009-04-16 | — | — | US | claimed |
| EP-2048700-A2 | Antireflective coatings | Air Products and Chemicals, Inc. (US) | 2009-04-15 | — | — | EP | claimed |
| US-11164739-B2 | Use of silicon structure former with organic substituted hardening additive compounds for dense OSG films | VERSUM MATERIALS US, LLC (US) | 2021-11-02 | — | — | US | disclosed |
| US-20190244810-A1 | Use of Silicon Structure Former with Organic Substituted Hardening Additive Compounds for Dense OSG Films | VERSUM MATERIALS US, LLC (US) | 2019-08-08 | — | — | US | disclosed |
| EP-2412011-B1 | CHEMICAL VAPOR DEPOSITION METHOD | TOKYO ELECTRON LTD (JP) | 2017-09-20 | — | — | EP | disclosed |
| EP-1848032-B1 | Materials and methods of forming controlled voids in dielectric layers | AIR PROD & CHEM (US) | 2017-03-01 | — | — | EP | disclosed |
| CN-102569179-B | Form material and the method in controlled space | 气体产品与化学公司 | 2016-08-03 | — | — | CN | disclosed |
| US-9293361-B2 | Materials and methods of forming controlled void | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2016-03-22 | — | — | US | disclosed |
| US-9212420-B2 | Chemical vapor deposition method | TOKYO ELECTRON LIMITED (JP) | 2015-12-15 | — | — | US | disclosed |
| EP-1848032-A2 | Materials and methods of forming controlled voids in dielectric layers | Air Products and Chemicals, Inc. (US) | 2007-10-24 | — | — | EP | disclosed |
| US-6846515-B2 | Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2005-01-25 | — | — | US | disclosed |
| US-20040241463-A1 | Mechanical enhancer additives for low dielectric films | VERSUM MATERIALS US, LLC | 2004-12-02 | — | — | US | disclosed |
| EP-1482070-A1 | Mechanical enhancer additives for low dielectric films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2004-12-01 | — | — | EP | disclosed |
| US-20030232137-A1 | Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants | VERSUM MATERIALS US, LLC | 2003-12-18 | — | — | US | disclosed |
| US-20030198742-A1 | Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants | VERSUM MATERIALS US, LLC | 2003-10-23 | — | — | US | disclosed |
| EP-1354980-A1 | Method for forming a porous SiOCH layer. | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2003-10-22 | — | — | EP | disclosed |