SCHEMBL728864

SCHEMBL728864

CCO[Si](C)(OC(C)=O)[Si](C)(OCC)OC(C)=O

nearest known ligand 0.42

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 7/20 0.42
LMNA P02545 1/20 0.42
HSD17B10 Q99714 1/20 0.42
TSHR P16473 2/20 0.34
PTGS2 P35354 1/20 0.31
TDP1 Q9NUW8 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL838934 0.80 ALDH1A1 (0.42) ALDH1A1LMNAHSD17B10TSHRTDP1
SCHEMBL839014 0.80 ALDH1A1 (0.42) ALDH1A1LMNAHSD17B10TSHRTDP1
SCHEMBL3912974 0.78 ALDH1A1 (0.40) ALDH1A1LMNAHSD17B10TSHR
SCHEMBL3910859 0.78 ALDH1A1 (0.40) ALDH1A1LMNAHSD17B10TSHR
SCHEMBL728853 0.78 ALDH1A1 (0.41) ALDH1A1LMNAHSD17B10TSHRTDP1
SCHEMBL487241 0.77 ALDH1A1 (0.43) ALDH1A1LMNAHSD17B10TSHRTDP1
SCHEMBL487332 0.77 ALDH1A1 (0.43) ALDH1A1LMNAHSD17B10TSHRTDP1
SCHEMBL502559 0.77 ALDH1A1 (0.43) ALDH1A1LMNAHSD17B10TSHRTDP1
SCHEMBL7053335 0.76 ALDH1A1 (0.39) ALDH1A1LMNAHSD17B10TSHR
SCHEMBL728906 0.76 ALDH1A1 (0.39) ALDH1A1LMNAHSD17B10TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 66 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-107636852-B Method for depositing porous organosilicate glass films for use as resistive random access memories 弗萨姆材料美国有限责任公司 2021-06-25 CN claimed
EP-2412011-B1 CHEMICAL VAPOR DEPOSITION METHOD TOKYO ELECTRON LTD (JP) 2017-09-20 EP claimed
US-9212420-B2 Chemical vapor deposition method TOKYO ELECTRON LIMITED (JP) 2015-12-15 US claimed
EP-1482070-B1 MECHANICAL ENHANCER ADDITIVES FOR LOW DIELECTRIC FILMS AIR PROD & CHEM (US) 2015-11-11 EP claimed
US-20100247803-A1 Chemical vapor deposition method TOKYO ELECTRON LIMITED (JP) 2010-09-30 US claimed
CN-101441415-A Antireflective coatings AIR PROD & CHEM (US) 2009-05-27 CN claimed
US-20090096106-A1 ANTIREFLECTIVE COATINGS AIR PRODUCTS AND CHEMICALS, INC. (US) 2009-04-16 US claimed
EP-2048700-A2 Antireflective coatings Air Products and Chemicals, Inc. (US) 2009-04-15 EP claimed
CN-1311097-C Mechanical enhancer additives for low dielectric films AIR PROD & CHEM (US) 2007-04-18 CN claimed
CN-1576390-A Mechanical enhancer additives for low dielectric films AIR PROD & CHEM (US) 2005-02-09 CN claimed
CN-116411261-A Boron-containing compounds, compositions, and methods for depositing boron-containing films 弗萨姆材料美国有限责任公司 2023-07-11 CN disclosed
US-11164739-B2 Use of silicon structure former with organic substituted hardening additive compounds for dense OSG films VERSUM MATERIALS US, LLC (US) 2021-11-02 US disclosed
CN-107636852-B Method for depositing porous organosilicate glass films for use as resistive random access memories 弗萨姆材料美国有限责任公司 2021-06-25 CN disclosed
US-20190244810-A1 Use of Silicon Structure Former with Organic Substituted Hardening Additive Compounds for Dense OSG Films VERSUM MATERIALS US, LLC (US) 2019-08-08 US disclosed
EP-3121310-B1 METHOD FOR REMOVAL OF CARBON FROM AN ORGANOSILICATE MATERIAL VERSUM MAT US LLC (US) 2018-02-28 EP disclosed
US-20040241463-A1 Mechanical enhancer additives for low dielectric films VERSUM MATERIALS US, LLC 2004-12-02 US disclosed
EP-1482070-A1 Mechanical enhancer additives for low dielectric films AIR PRODUCTS AND CHEMICALS, INC. (US) 2004-12-01 EP disclosed
US-20030232137-A1 Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants VERSUM MATERIALS US, LLC 2003-12-18 US disclosed
US-20030198742-A1 Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants VERSUM MATERIALS US, LLC 2003-10-23 US disclosed
EP-1354980-A1 Method for forming a porous SiOCH layer. AIR PRODUCTS AND CHEMICALS, INC. (US) 2003-10-22 EP disclosed