SCHEMBL74478

SCHEMBL74478

CC(C)OCCOc1cccc(OCCOC(C)C)c1

nearest known ligand 0.54

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NPSR1 Q6W5P4 1/20 0.54
MAPK1 P28482 3/20 0.49
KDM4E B2RXH2 2/20 0.46
NSD2 O96028 1/20 0.46
ALDH1A1 P00352 1/20 0.46
SMN1; SMN2 Q16637 1/20 0.46
L3MBTL1 Q9Y468 4/20 0.45
CYP1A2 P05177 2/20 0.45
CYP2C19 P33261 2/20 0.45
MEN1 O00255 1/20 0.45
CYP3A4 P08684 1/20 0.45
CYP2C9 P11712 1/20 0.45
RECQL P46063 1/20 0.45
KMT2A Q03164 1/20 0.45
NPC1 O15118 1/20 0.44
POLB P06746 1/20 0.44
RAB9A P51151 1/20 0.44
CTDSP1 Q9GZU7 1/20 0.44
TSHR P16473 2/20 0.44
LMNA P02545 2/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16672176 0.93 NPSR1 (0.65) NPSR1MAPK1KDM4EALDH1A1L3MBTL1
SCHEMBL14559903 0.89 LMNA (0.48) NPSR1MAPK1KDM4ENSD2ALDH1A1
SCHEMBL18355078 0.89 NPSR1 (0.47) NPSR1MAPK1KDM4ENSD2ALDH1A1
SCHEMBL20322452 0.89 SMN1; SMN2 (0.52) MAPK1KDM4EALDH1A1SMN1; SMN2L3MBTL1
SCHEMBL19384613 0.87 KDM4E (0.51) NPSR1KDM4EALDH1A1SMN1; SMN2L3MBTL1
SCHEMBL25944129 0.87 KDM4E (0.60) NPSR1MAPK1KDM4ENSD2ALDH1A1
SCHEMBL75301 0.87 HPGD (0.41) NPSR1MAPK1KDM4ENSD2ALDH1A1
SCHEMBL9610288 0.86 NPSR1 (0.43) NPSR1MAPK1KDM4EALDH1A1SMN1; SMN2
SCHEMBL8170706 0.86 KDM4E (0.54) NPSR1MAPK1KDM4EALDH1A1SMN1; SMN2
SCHEMBL14118787 0.85 LMNA (0.50) NPSR1MAPK1KDM4ENSD2ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 439 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11914294-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 US disclosed
US-20240027902-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-11860540-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-02 US disclosed
US-20230350296-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-02 US disclosed
US-20230314944-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-05 US disclosed
US-11720021-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-08-08 US disclosed
US-11709427-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-07-25 US disclosed
US-20230161252-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed
US-20230152696-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-18 US disclosed
EP-2813892-B1 Photoresist underlayer film-forming composition and pattern forming processes SHINETSU CHEMICAL CO (JP) 2020-06-17 EP disclosed
US-7211367-B2 Photo acid generator, chemical amplification resist material SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-01 US disclosed
US-7211367-B2 Photo acid generator, chemical amplification resist material SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-01 US disclosed
US-20070087287-A1 Amine compound, chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-04-19 US disclosed
US-20070087287-A1 Amine compound, chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-04-19 US disclosed
US-20070072115-A1 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-03-29 US disclosed
US-20070072115-A1 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-03-29 US disclosed
US-7179581-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-02-20 US disclosed
US-7179581-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-02-20 US disclosed
US-20070037091-A1 2,4,6-Triisopropylbenzenesulfonate compound capable of generating an acid upon exposure to radiation or electron beams, polymer which changes solubility in alkaline developer under action of acid, and basic compound having high sensitivity, contrast, resolution, storage stability KOITABASHI RYUJI 2007-02-15 US disclosed
US-20070037091-A1 2,4,6-Triisopropylbenzenesulfonate compound capable of generating an acid upon exposure to radiation or electron beams, polymer which changes solubility in alkaline developer under action of acid, and basic compound having high sensitivity, contrast, resolution, storage stability KOITABASHI RYUJI 2007-02-15 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11709427-B2 Positive resist composition and pattern forming process EWSR1, PARG, VIM NPSR1 2118/4885MAPK1 3735/4885KDM4E 1171/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.