SCHEMBL9610288

SCHEMBL9610288

CC(C)OCCOc1cccc(COC(C)C)c1

nearest known ligand 0.43

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
NPSR1 Q6W5P4 1/20 0.43
MAOB P27338 7/20 0.41
IDO1 P14902 2/20 0.41
AGXT P21549 2/20 0.41
L3MBTL1 Q9Y468 2/20 0.40
TSHR P16473 1/20 0.40
MAPK1 P28482 1/20 0.40
TDP1 Q9NUW8 1/20 0.40
TAAR1 Q96RJ0 2/20 0.40
KDM4E B2RXH2 1/20 0.40
ALDH1A1 P00352 1/20 0.40
SMN1; SMN2 Q16637 1/20 0.40
BCHE P06276 1/20 0.40
NPC1 O15118 1/20 0.39
POLB P06746 1/20 0.39
RAB9A P51151 1/20 0.39
CTDSP1 Q9GZU7 1/20 0.39
FFAR1 O14842 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8170706 0.87 KDM4E (0.54) NPSR1L3MBTL1TSHRMAPK1TDP1
SCHEMBL74478 0.86 NPSR1 (0.54) NPSR1L3MBTL1TSHRMAPK1KDM4E
SCHEMBL10224057 0.85 TAAR1 (0.46) NPSR1L3MBTL1TSHRMAPK1TDP1
SCHEMBL10223981 0.83 GGPS1 (0.42) NPSR1L3MBTL1TSHRMAPK1TDP1
SCHEMBL9610293 0.82 HPGD (0.36) NPSR1L3MBTL1NPC1POLBRAB9A
SCHEMBL12220716 0.81 IDO1 (0.62) MAOBIDO1AGXTTAAR1
SCHEMBL18386037 0.80 NPSR1 (0.39) NPSR1L3MBTL1TSHRMAPK1TDP1
SCHEMBL646907 0.80 IDO1 (0.42) IDO1AGXTTAAR1
SCHEMBL20322452 0.79 SMN1; SMN2 (0.52) L3MBTL1MAPK1TDP1KDM4EALDH1A1
SCHEMBL16672176 0.79 NPSR1 (0.65) NPSR1MAOBL3MBTL1TSHRMAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 45 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240027909-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20230161255-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed
US-10005868-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-9910358-B2 Patterning process and chemically amplified negative resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-06 US disclosed
US-9632415-B2 Pattern forming process and shrink agent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-25 US disclosed
US-9620363-B2 Underlayer film-forming composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-11 US disclosed
US-20170029547-A1 RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-02-02 US disclosed
US-9429843-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-30 US disclosed
US-9429846-B2 Pattern forming process and shrink agent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-30 US disclosed
US-20160229940-A1 POLYMER, RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-11 US disclosed
US-20130084528-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-04 US disclosed
US-20120328987-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-12-27 US disclosed
US-20120315581-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-12-13 US disclosed
US-20120288796-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-11-15 US disclosed
US-20120196227-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, PATTERNING PROCESS, AND ACID-DECOMPOSABLE KETO ESTER COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-02 US disclosed
US-20120135349-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-31 US disclosed
US-20120108043-A1 PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-03 US disclosed
US-8030515-B2 Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-10-04 US disclosed
US-20110236826-A1 PATTERNING PROCESS, RESIST COMPOSITION, AND ACETAL COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-09-29 US disclosed
US-20110160481-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-06-30 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110236826-A1 PATTERNING PROCESS, RESIST COMPOSITION, AND ACETAL COMPOUND PARG, RAD51, CD38 NPSR1 4481/4885MAOB 620/4885IDO1 4089/4885
US-20120196227-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, PATTERNING PROCESS, AND ACID-DECOMPOSABLE KETO ESTER COMPOUND ESRRA, ESRRB, CYP17A1 NPSR1 3582/4885MAOB 3219/4885IDO1 4612/4885
US-20110160481-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, TST NPSR1 3263/4885MAOB 2819/4885IDO1 3805/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.