SCHEMBL7460567

SCHEMBL7460567

O=C(OCc1c([N+](=O)[O-])cccc1C(F)(F)F)c1c(F)c(F)c(F)c(F)c1F

nearest known ligand 0.40

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
▸ CA1 P00915 2/20 0.40
▸ CA2 P00918 2/20 0.40
▸ ALDH1A1 P00352 3/20 0.37
▸ MMP1 P03956 1/20 0.37
▸ MMP2 P08253 1/20 0.37
▸ MMP9 P14780 1/20 0.37
▸ MMP12 P39900 1/20 0.37
▸ ENPP2 Q13822 1/20 0.37
▸ NPSR1 Q6W5P4 1/20 0.36
▸ AR P10275 1/20 0.36
▸ P2RX1 P51575 1/20 0.35
▸ MEN1 O00255 1/20 0.35
▸ POLB P06746 1/20 0.35
▸ KMT2A Q03164 1/20 0.35
▸ TXNRD1 Q16881 1/20 0.34
▸ PTGES O14684 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13758582 0.84 KMT2A (0.43) ALDH1A1ENPP2NPSR1MEN1KMT2A
SCHEMBL13764515 0.78 MMP1 (0.39) CA1CA2ALDH1A1MMP1MMP2
SCHEMBL27600650 0.76 ALDH1A1 (0.38) ALDH1A1ENPP2NPSR1ARP2RX1
SCHEMBL14509395 0.76 CA2 (0.41) CA1CA2ALDH1A1MMP1MMP2
SCHEMBL7458876 0.74 ALDH1A1 (0.46) ALDH1A1ENPP2NPSR1ARP2RX1
SCHEMBL18816146 0.74 ALDH1A1 (0.47) ALDH1A1ENPP2P2RX1MEN1KMT2A
SCHEMBL17974652 0.72 NPSR1 (0.48) ALDH1A1ENPP2NPSR1ARP2RX1
SCHEMBL7603661 0.72 GPR35 (0.42) ALDH1A1NPSR1P2RX1MEN1KMT2A
SCHEMBL31184606 0.71 ALDH1A1 (0.43) ALDH1A1ENPP2NPSR1ARP2RX1
SCHEMBL17857084 0.71 ALDH1A1 (0.46) ALDH1A1ENPP2NPSR1ARP2RX1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7579131-B2 Positive resist composition and method of forming resist pattern using the same FUJIFILM CORPORATION (JP) 2009-08-25 — — US disclosed
US-7521168-B2 Compound that has a reduction potential higher than that of diphenyl iodonium salt and generates an acid upon irradiation of an actinic ray or radiation. FUJIFILM CORPORATION (JP) 2009-04-21 — — US disclosed
US-7521168-B2 Compound that has a reduction potential higher than that of diphenyl iodonium salt and generates an acid upon irradiation of an actinic ray or radiation. FUJIFILM CORPORATION (JP) 2009-04-21 — — US disclosed
US-7214467-B2 Photosensitive resin composition FUJIFILM CORPORATION (JP) 2007-05-08 — — US disclosed
US-7214467-B2 Photosensitive resin composition FUJIFILM CORPORATION (JP) 2007-05-08 — — US disclosed
US-7202015-B2 Positive photoresist composition and pattern making method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-04-10 — — US disclosed
US-7202015-B2 Positive photoresist composition and pattern making method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-04-10 — — US disclosed
US-7198880-B2 Positive resist composition FUJIFILM CORPORATION (JP) 2007-04-03 — — US disclosed
US-7198880-B2 Positive resist composition FUJIFILM CORPORATION (JP) 2007-04-03 — — US disclosed
US-7163776-B2 Positive-working resist composition FUJI PHOTO FILM CO., LTD. (JP) 2007-01-16 — — US disclosed
US-7163776-B2 Positive-working resist composition FUJI PHOTO FILM CO., LTD. (JP) 2007-01-16 — — US disclosed
US-7160666-B2 Photosensitive resin composition FUJI PHOTO FILM CO., LTD. (JP) 2007-01-09 — — US disclosed
US-7160666-B2 Photosensitive resin composition FUJI PHOTO FILM CO., LTD. (JP) 2007-01-09 — — US disclosed
US-7157206-B2 Resin containing an acid-decomposable group such as bis(trifluoromethyl)methanol group, to generate alkali-soluble group, and acid generators selected from fluorine-substituted or non-fluorine substituted aromatic or aliphatic carboxylic acid generators or sulfonic acid generators; microlithography FUJI PHOTO FILM CO., LTD. (JP) 2007-01-02 — — US disclosed
US-7157206-B2 Resin containing an acid-decomposable group such as bis(trifluoromethyl)methanol group, to generate alkali-soluble group, and acid generators selected from fluorine-substituted or non-fluorine substituted aromatic or aliphatic carboxylic acid generators or sulfonic acid generators; microlithography FUJI PHOTO FILM CO., LTD. (JP) 2007-01-02 — — US disclosed
US-6485883-B2 Positive photoresist composition FUJI PHOTO FILM CO., LTD. (JP) 2002-11-26 — — US disclosed
US-20010041300-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2001-11-15 — — US disclosed
EP-1112251-A1 AZETIDINE DERIVATIVES, PREPARATION AND MEDICINES CONTAINING THEM Aventis Pharma S.A. (FR) 2001-07-04 — — EP disclosed
WO-2000015609-A1 AZETIDINE DERIVATIVES, PREPARATION AND MEDICINES CONTAINING THEM AVENTIS PHARMA S.A. (FR) 2000-03-23 — — WO disclosed
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