SCHEMBL7538560

SCHEMBL7538560

CCCCC(C(C)=O)C(=NO)c1ccccc1

nearest known ligand 0.46

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
POLB P06746 1/20 0.46
CES2 O00748 4/20 0.42
CES1 P23141 4/20 0.42
CNR2 P34972 1/20 0.40
PRSS1 P07477 1/20 0.40
CTSG P08311 1/20 0.40
CTRB1 P17538 1/20 0.40
CMA1 P23946 1/20 0.40
NAAA Q02083 1/20 0.40
ALDH1A1 P00352 3/20 0.39
LMNA P02545 1/20 0.37
MAPK1 P28482 1/20 0.37
TDP1 Q9NUW8 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1899408 0.82 POLB (0.49) POLBCES2CES1CNR2PRSS1
SCHEMBL7086708 0.80 PTGS2 (0.41) POLBCES2CES1CNR2PRSS1
SCHEMBL11765158 0.78 PRSS1 (0.39) POLBCES2CES1CNR2PRSS1
SCHEMBL11528495 0.78 CES2 (0.47) POLBCES2CES1CNR2PRSS1
SCHEMBL504212 0.76 MDM2 (0.53) POLBCES2CES1CNR2PRSS1
SCHEMBL5275919 0.76 MMP2 (0.49) POLBCES2CES1CNR2PRSS1
SCHEMBL1030508 0.76 MMP2 (0.49) POLBCES2CES1CNR2PRSS1
SCHEMBL3677232 0.76 MMP2 (0.49) POLBCES2CES1CNR2PRSS1
SCHEMBL207033 0.76 PTGS2 (0.38) POLBCES2CES1CNR2PRSS1
SCHEMBL5340196 0.76 MMP2 (0.49) POLBCES2CES1CNR2PRSS1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-0860740-B1 Pattern forming material MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) 2002-05-29 EP disclosed
US-6261736-B1 COMPRISING POLYMER WHICH GENERATES ACID WHEN HEATED AND COMPOUND WHICH GENERATES A BASE WHEN IRRADIATED; SEMICONDUCTOR INTEGRATED CIRCUITS; PHOTORESIST FILMS MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2001-07-17 US disclosed
EP-1028353-A1 Pattern forming method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2000-08-16 EP disclosed
US-6017683-A COATING SEMICONDUCTOR SUBSTRATE WITH PATTERN FORMING MATERIAL INCLUDING POLYMER; HEATING TO GENERATE ACID FROM POLYMER; IRRADIATING RESIST FILM TO GENERATE BASE; SUPPLYING METAL ALKOXIDE ONTO FILM AND FORMING METAL OXIDE FILM; DRY ETCHING MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2000-01-25 US disclosed
EP-0860740-A1 Pattern forming material and pattern forming method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1998-08-26 EP disclosed