SCHEMBL7541393

SCHEMBL7541393

CC(O)c1ccc(O)c(I)c1

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 9/20 0.47
MAPT P10636 9/20 0.47
KDM4E B2RXH2 7/20 0.47
RECQL P46063 6/20 0.47
KMT2A Q03164 5/20 0.47
LMNA P02545 4/20 0.47
MTOR P42345 4/20 0.47
HIF1A Q16665 4/20 0.47
TSHR P16473 4/20 0.47
HSD17B10 Q99714 4/20 0.47
BLM P54132 3/20 0.47
APEX1 P27695 3/20 0.47
NFKB1 P19838 2/20 0.47
POLB P06746 2/20 0.47
ALOX15 P16050 1/20 0.47
THPO P40225 1/20 0.47
UGT2B7 P16662 1/20 0.45
ADRB2 P07550 5/20 0.42
ADRB1 P08588 5/20 0.42
ADRB3 P13945 4/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL788149 0.84 ALDH1A1 (0.57) TDP1MAPTKDM4ERECQLKMT2A
SCHEMBL11112214 0.84 ESR1 (0.46) TDP1MAPTKDM4ERECQLKMT2A
SCHEMBL24589240 0.83 TDP1 (0.36) TDP1MAPTKDM4ERECQLKMT2A
SCHEMBL241136 0.81 TDP1 (0.65) TDP1MAPTKDM4ERECQLKMT2A
SCHEMBL29525823 0.81 TDP1 (0.65) TDP1MAPTKDM4ERECQLKMT2A
SCHEMBL31275900 0.79 HIF1A (0.35) TDP1MAPTKDM4ERECQLKMT2A
SCHEMBL24589241 0.79 FOLH1 (0.40) TDP1MAPTKDM4ERECQLKMT2A
SCHEMBL13711036 0.78 UGT2B7 (0.45) TDP1MAPTKDM4ERECQLKMT2A
SCHEMBL24588593 0.78 FOLH1 (0.42) TDP1MAPTKDM4ERECQLKMT2A
SCHEMBL24313902 0.78 GAA (0.62) TDP1MAPTKDM4EKMT2ALMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11822244-B2 Compound, resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-11-21 US disclosed
US-11820736-B2 Salt, acid generator, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-11-21 US disclosed
US-11820736-B2 Salt, acid generator, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-11-21 US disclosed
US-11822244-B2 Compound, resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-11-21 US disclosed
US-20230348351-A1 COMPOUND, POLYMER, COMPOSITION, COMPOSITION FOR FILM FORMATION, PATTERN FORMATION METHOD, INSULATING FILM FORMATION METHOD, AND METHOD FOR PRODUCING COMPOUND MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-11-02 US disclosed
US-20230348351-A1 COMPOUND, POLYMER, COMPOSITION, COMPOSITION FOR FILM FORMATION, PATTERN FORMATION METHOD, INSULATING FILM FORMATION METHOD, AND METHOD FOR PRODUCING COMPOUND MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-11-02 US disclosed
US-20230348351-A1 COMPOUND, POLYMER, COMPOSITION, COMPOSITION FOR FILM FORMATION, PATTERN FORMATION METHOD, INSULATING FILM FORMATION METHOD, AND METHOD FOR PRODUCING COMPOUND MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-11-02 US disclosed
CN-116615405-A Compound, polymer, composition for film formation, method for forming pattern, method for forming insulating film, and method for producing compound 三菱瓦斯化学株式会社 2023-08-18 CN disclosed
US-20230028443-A1 SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-01-26 US disclosed
US-20230004084-A1 SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-01-05 US disclosed
US-20220413383-A1 SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2022-12-29 US disclosed
WO-2022138670-A1 COMPOUND, POLYMER, COMPOSITION, FILM-FORMING COMPOSITION, PATTERN FORMATION METHOD, METHOD FOR FORMING INSULATING FILMS, AND COMPOUND PRODUCTION METHOD 三菱瓦斯化学株式会社 2022-06-30 WO disclosed
WO-2022138670-A1 COMPOUND, POLYMER, COMPOSITION, FILM-FORMING COMPOSITION, PATTERN FORMATION METHOD, METHOD FOR FORMING INSULATING FILMS, AND COMPOUND PRODUCTION METHOD 三菱瓦斯化学株式会社 2022-06-30 WO disclosed
US-20210389669-A1 COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2021-12-16 US disclosed
EP-1084105-A4 CARBAPENEM ANTIBACTERIAL COMPOUNDS, COMPOSITIONS CONTAINING SUCH COMPOUNDS AND METHODS OF TREATMENT MERCK & CO INC (US) 2002-10-30 EP disclosed
US-6310055-B2 CARBAPENEM NUCLEUS 2-SUBSTITUTED WITH A HALOPHENOXY LINKED THROUGH AN UNSATURATED GROUP, AND FURTHER INCLUDES AT LEAST ONE AMINE SALT OR QUATERNARY AMMONIUM GROUP; WORKS AGAINST GRAMPOSITIVE METHICILLIN RESISTANT BACTERIA MERCK & CO., INC. 2001-10-30 US disclosed
US-20010020018-A1 CARBAPENEM ANTIBACTERIAL COMPOUNDS, COMPOSITIONS CONTAINING SUCH COMPOUNDS AND METHODS OF TREATMENT MERCK & CO., INC. 2001-09-06 US disclosed
EP-1084105-A1 CARBAPENEM ANTIBACTERIAL COMPOUNDS, COMPOSITIONS CONTAINING SUCH COMPOUNDS AND METHODS OF TREATMENT Merck & Co., Inc. (US) 2001-03-21 EP disclosed
WO-1999062878-A1 CARBAPENEM ANTIBACTERIAL COMPOUNDS, COMPOSITIONS CONTAINING SUCH COMPOUNDS AND METHODS OF TREATMENT MERCK & CO., INC. (US) 1999-12-09 WO disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (8 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20010020018-A1 CARBAPENEM ANTIBACTERIAL COMPOUNDS, COMPOSITIONS CONTAINING SUCH COMPOUNDS AND METHODS OF TREATMENT TOP1, NRDC, PAICS TDP1 4498/4885MAPT 4547/4885KDM4E 1440/4885
US-20230004084-A1 SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN H1-10, H1-0, H1-4 TDP1 4696/4885MAPT 4619/4885KDM4E 2769/4885
US-20210389669-A1 COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN RER1, AFF1, AFF4 TDP1 4013/4885MAPT 3833/4885KDM4E 1502/4885
US-20230348351-A1 COMPOUND, POLYMER, COMPOSITION, COMPOSITION FOR FILM FORMATION, PATTERN FORMATION METHOD, INSULATING FILM FORMATION METHOD, AND METHOD FOR PRODUCING COMPOUND PHOSPHO1, RER1, RIF1 TDP1 2166/4885MAPT 2784/4885KDM4E 238/4885
US-20230028443-A1 SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN HDHD5, H1-0, SCO2 TDP1 4690/4885MAPT 4764/4885KDM4E 4065/4885
US-11822244-B2 Compound, resin, resist composition and method for producing resist pattern RER1, AFF1, AFF4 TDP1 4013/4885MAPT 3833/4885KDM4E 1502/4885
US-11820736-B2 Salt, acid generator, resist composition and method for producing resist pattern H1-10, H1-0, H1-2 TDP1 4774/4885MAPT 4799/4885KDM4E 4076/4885
US-20220413383-A1 SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN H1-10, H1-0, OR10J3 TDP1 4734/4885MAPT 4811/4885KDM4E 3843/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.