SCHEMBL75712

SCHEMBL75712

C=C(C)C(=O)OC(C)(C)C(O)(C(F)(F)F)C(F)(F)F

nearest known ligand 0.38

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.38
TSHR P16473 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL85910 0.89 ALDH1A1 (0.35) ALDH1A1
SCHEMBL951543 0.86
SCHEMBL86349 0.85 ALDH1A1 (0.42) ALDH1A1TSHR
SCHEMBL9610644 0.84 ALDH1A1 (0.38) ALDH1A1TSHR
SCHEMBL951387 0.84
SCHEMBL23974086 0.82 ALDH1A1 (0.39) ALDH1A1TSHR
SCHEMBL5889516 0.82 ALDH1A1 (0.39) ALDH1A1TSHR
SCHEMBL2206641 0.81 TSHR (0.36) ALDH1A1TSHR
SCHEMBL9888264 0.81 TSHR (0.37) ALDH1A1TSHR
SCHEMBL3182460 0.79 ALDH1A1 (0.34) ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 484 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250218768-A1 Composition For Forming Silicon-Containing Anti-Reflective Film And Patterning Method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-03 US disclosed
EP-4579345-A2 COMPOSITION FOR FORMING SILICON-CONTAINING ANTI-REFLECTIVE FILM AND PATTERNING METHOD Shin-Etsu Chemical Co., Ltd. (JP) 2025-07-02 EP disclosed
US-20250166999-A1 Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-05-22 US disclosed
EP-4557002-A2 PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2025-05-21 EP disclosed
US-12032288-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-09 US disclosed
US-12032288-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-09 US disclosed
US-12032290-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-09 US disclosed
US-20230400769-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-12-14 US disclosed
US-20230400769-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-12-14 US disclosed
US-11835860-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-05 US disclosed
US-20070298355-A1 Resist top coat composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-27 US disclosed
US-20070264592-A1 Resist polymer, preparing method, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-11-15 US disclosed
US-20070264592-A1 Resist polymer, preparing method, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-11-15 US disclosed
EP-1829850-A2 Fluoroalcohol preparation method, fluorinated monomer, polymer, resist composition and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2007-09-05 EP disclosed
EP-1829850-A2 Fluoroalcohol preparation method, fluorinated monomer, polymer, resist composition and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2007-09-05 EP disclosed
US-20070179309-A1 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-08-02 US disclosed
US-20070179309-A1 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-08-02 US disclosed
US-20070179309-A1 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-08-02 US disclosed
US-20070178407-A1 Polymer, resist protective coating material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-08-02 US disclosed
US-20070178407-A1 Polymer, resist protective coating material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-08-02 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20070179309-A1 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning AFF1, FASN, FAR1 ALDH1A1 1887/4885TSHR 197/4885
US-12032288-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device RER1, COL1A1, RAD51 ALDH1A1 762/4885TSHR 3144/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.