Predicted protein targets (top 2)
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14666435 | 0.83 | TSHR (0.40) | TSHRALDH1A1 | |
| SCHEMBL92325 | 0.82 | ALDH1A1 (0.34) | TSHRALDH1A1 | |
| SCHEMBL2880813 | 0.81 | TSHR (0.33) | TSHRALDH1A1 | |
| SCHEMBL7602469 | 0.81 | TSHR (0.41) | TSHRALDH1A1 | |
| SCHEMBL14666434 | 0.81 | TSHR (0.38) | TSHR | |
| SCHEMBL1535929 | 0.80 | TSHR (0.37) | TSHRALDH1A1 | |
| SCHEMBL12159365 | 0.79 | TSHR (0.32) | TSHR | |
| SCHEMBL795471 | 0.79 | TSHR (0.42) | TSHRALDH1A1 | |
| SCHEMBL15834135 | 0.78 | TSHR (0.33) | TSHRALDH1A1 | |
| SCHEMBL21599231 | 0.78 | TSHR (0.38) | TSHRALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 33 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230400767-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND | JSR CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230384676-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING PATTERN, POLYMER, AND COMPOUND | JSR CORPORATION (JP) | 2023-11-30 | — | — | US | disclosed |
| US-20230305398-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-28 | — | — | US | disclosed |
| US-20230296980-A1 | RESIST MATERIAL AND PATTERN FORMING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-21 | — | — | US | disclosed |
| US-20230296981-A1 | RESIST MATERIAL AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-21 | — | — | US | disclosed |
| US-20230132653-A1 | MOLECULAR RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-04 | — | — | US | disclosed |
| US-10012902-B2 | Positive resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-07-03 | — | — | US | disclosed |
| US-20170242339-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-08-24 | — | — | US | disclosed |
| US-20170115565-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-04-27 | — | — | US | disclosed |
| US-9587137-B2 | Conductive polymer composite comprising a sulfo group-containing dopant polymer and substrate | SHI-ETSU CHEMICAL CO., LTD. (JP) | 2017-03-07 | — | — | US | disclosed |
| US-20130224660-A1 | PREPARATION OF POLYMER, RESULTING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-08-29 | — | — | US | disclosed |
| US-20130224659-A1 | POLYMER, MAKING METHOD, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-08-29 | — | — | US | disclosed |
| US-20130059252-A1 | METHOD FOR FORMING RESIST PATTERN AND COMPOSITION FOR FORMING PROTECTIVE FILM | JSR CORPORATION (JP) | 2013-03-07 | — | — | US | disclosed |
| US-8323536-B2 | Near-infrared absorbing dye, near-infrared absorptive film-forming composition, and near-infrared absorptive film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-12-04 | — | — | US | disclosed |
| US-8288076-B2 | Chemically amplified resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-10-16 | — | — | US | disclosed |
| US-20120119171-A1 | NEAR-INFRARED ABSORBING DYE, NEAR-INFRARED ABSORPTIVE FILM-FORMING COMPOSITION, AND NEAR-INFRARED ABSORPTIVE FILM | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-05-17 | — | — | US | disclosed |
| US-20110200919-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-08-18 | — | — | US | disclosed |
| US-20110189607-A1 | NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-08-04 | — | — | US | disclosed |
| US-20110183263-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-07-28 | — | — | US | disclosed |
| US-20100304302-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-12-02 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20120119171-A1 | NEAR-INFRARED ABSORBING DYE, NEAR-INFRARED ABSORPTIVE FILM-FORMING COMPOSITION, AND NEAR-INFRARED ABSORPTIVE FILM | SLCO2A1, SLC39A3, SLCO2B1 | TSHR 966/4885ALDH1A1 1150/4885 |
| US-20230384676-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING PATTERN, POLYMER, AND COMPOUND | RER1, RFT1, RAD51 | TSHR 2652/4885ALDH1A1 347/4885 |
| US-20110189607-A1 | NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS | RPS4Y1, ETV6, RPS4X | TSHR 3175/4885ALDH1A1 4540/4885 |
| US-20230400767-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND | RER1, RAD51, RFT1 | TSHR 2236/4885ALDH1A1 1315/4885 |
| US-10012902-B2 | Positive resist composition and pattern forming process | EWSR1, SRPRA, SRPRB | TSHR 3503/4885ALDH1A1 4318/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.