SCHEMBL7602469

SCHEMBL7602469

CC(=O)OC(C)C(F)(F)S(=O)(=O)O

nearest known ligand 0.41

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.41
ALDH1A1 P00352 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
CHRM2 P08172 1/20 0.32
CHRM4 P08173 1/20 0.32
CHRM1 P11229 1/20 0.32
TBXA2R P21731 1/20 0.32
GALR3 O60755 1/20 0.31
MAPT P10636 1/20 0.31
BLM P54132 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31
TDP1 Q9NUW8 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12016464 0.82 ALDH1A1 (0.32) ALDH1A1L3MBTL1
SCHEMBL7601293 0.81 TSHR (0.36) TSHRALDH1A1
SCHEMBL7602475 0.80 PRKCA (0.34) ALDH1A1L3MBTL1
SCHEMBL31665948 0.80 TSHR (0.38) TSHRALDH1A1L3MBTL1CHRM2CHRM4
SCHEMBL15367968 0.80 TSHR (0.38) TSHRALDH1A1L3MBTL1CHRM2CHRM4
SCHEMBL385055 0.79 TSHR (0.36) TSHRALDH1A1L3MBTL1TDP1
SCHEMBL16072442 0.79 TSHR (0.36) TSHRALDH1A1L3MBTL1TDP1
SCHEMBL22741296 0.79 TSHR (0.36) TSHRALDH1A1L3MBTL1TDP1
SCHEMBL11991253 0.79 MEN1 (0.31) ALDH1A1L3MBTL1
SCHEMBL12376800 0.77 TSHR (0.36) TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11839476-B2 Bio-electrode composition, bio-electrode, and method for manufacturing a bio-electrode SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-12 US disclosed
US-20230375928-A1 Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-23 US disclosed
US-20230244142-A1 POLYMER, RESIST COMPOSITION, AND PATTERN FORMING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-08-03 US disclosed
US-20230132653-A1 MOLECULAR RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-04 US disclosed
US-RE46765-E1 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-27 US disclosed
US-RE46736-E1 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
US-9703193-B2 Onium salt, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-07-11 US disclosed
US-9645491-B2 Sulfonium salt, chemically amplified resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-09 US disclosed
US-20160349612-A1 SULFONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-12-01 US disclosed
US-20160320698-A1 ONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-11-03 US disclosed
US-8951710-B2 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-02-10 US disclosed
US-20140342274-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-11-20 US disclosed
US-8835096-B2 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-09-16 US disclosed
US-8323536-B2 Near-infrared absorbing dye, near-infrared absorptive film-forming composition, and near-infrared absorptive film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-12-04 US disclosed
US-20120288796-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-11-15 US disclosed
US-20120219887-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-30 US disclosed
US-20120214100-A1 RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-23 US disclosed
US-20120119171-A1 NEAR-INFRARED ABSORBING DYE, NEAR-INFRARED ABSORPTIVE FILM-FORMING COMPOSITION, AND NEAR-INFRARED ABSORPTIVE FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-17 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20160349612-A1 SULFONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS FANCF, PPM1F, SOS2 TSHR 4852/4885ALDH1A1 2818/4885L3MBTL1 3942/4885
US-20120119171-A1 NEAR-INFRARED ABSORBING DYE, NEAR-INFRARED ABSORPTIVE FILM-FORMING COMPOSITION, AND NEAR-INFRARED ABSORPTIVE FILM SLCO2A1, SLC39A3, SLCO2B1 TSHR 966/4885ALDH1A1 1150/4885L3MBTL1 2709/4885
US-11839476-B2 Bio-electrode composition, bio-electrode, and method for manufacturing a bio-electrode AFF1, AFF4, AFF2 TSHR 2547/4885ALDH1A1 256/4885L3MBTL1 3199/4885
US-20160320698-A1 ONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS SLC6A5, EIF2B5, EIF2B4 TSHR 4801/4885ALDH1A1 3739/4885L3MBTL1 3318/4885
US-20230375928-A1 Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process NAF1, RALA, RSU1 TSHR 2101/4885ALDH1A1 1459/4885L3MBTL1 2407/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.