Predicted protein targets (top 5)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.34 |
| ▸ | TSHR | P16473 | 1/20 | 0.32 |
| ▸ | CA1 | P00915 | 1/20 | 0.31 |
| ▸ | CA2 | P00918 | 1/20 | 0.31 |
| ▸ | CA9 | Q16790 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2284166 | 0.89 | TSHR (0.30) | TSHR | |
| SCHEMBL12159365 | 0.85 | TSHR (0.32) | TSHR | |
| SCHEMBL16820425 | 0.85 | ALDH1A1 (0.31) | ALDH1A1TSHR | |
| Lithium Ion SCHEMBL16820427 | 0.85 | ALDH1A1 (0.31) | ALDH1A1TSHR | |
| SCHEMBL6117936 | 0.85 | ELANE (0.33) | — | |
| SCHEMBL47311 | 0.85 | ALDH1A1 (0.42) | ALDH1A1TSHR | |
| SCHEMBL12119737 | 0.84 | TSHR (0.32) | TSHR | |
| SCHEMBL12119738 | 0.84 | TSHR (0.32) | TSHR | |
| SCHEMBL11964318 | 0.84 | CA1 (0.32) | ALDH1A1CA1CA2CA9 | |
| SCHEMBL11964321 | 0.83 | TSHR (0.37) | ALDH1A1TSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 236 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12429772-B2 | Chemically amplified resist composition, photomask blank, method for forming resist pattern, and method for producing polymer compound | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-30 | — | — | US | disclosed |
| US-20230384676-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING PATTERN, POLYMER, AND COMPOUND | JSR CORPORATION (JP) | 2023-11-30 | — | — | US | disclosed |
| US-20230375928-A1 | Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-23 | — | — | US | disclosed |
| US-20230375928-A1 | Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-23 | — | — | US | disclosed |
| US-20220404701-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION, PHOTOMASK BLANK, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR PRODUCING POLYMER COMPOUND | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-12-22 | — | — | US | disclosed |
| WO-2022196024-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER, AND COMPOUND | JSR株式会社 | 2022-09-22 | — | — | WO | disclosed |
| US-20220107560-A1 | SULFONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-04-07 | — | — | US | disclosed |
| EP-3495433-B1 | CONDUCTIVE POLYMER COMPOSITION, COATED ARTICLE, AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2021-11-10 | — | — | EP | disclosed |
| US-20200140592-A1 | PREPARATION OF POLYMER AND POLYMER | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-05-07 | — | — | US | disclosed |
| EP-3079015-B1 | PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND METHOD FOR MAKING PHOTOMASK | SHINETSU CHEMICAL CO (JP) | 2020-04-29 | — | — | EP | disclosed |
| US-20100227273-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-09-09 | — | — | US | disclosed |
| US-20100227274-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-09-09 | — | — | US | disclosed |
| US-20100129738-A1 | POSITIVE RESIST COMPOSITION AND PATTERING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-05-27 | — | — | US | disclosed |
| US-20090297979-A1 | Polymerizable compound, polymer, positive resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-12-03 | — | — | US | disclosed |
| US-20090269696-A1 | SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-10-29 | — | — | US | disclosed |
| US-20090269696-A1 | SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-10-29 | — | — | US | disclosed |
| US-20090202940-A1 | Positive resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-13 | — | — | US | disclosed |
| US-20090202947-A1 | Positive resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO.,LTD (JP) | 2009-08-13 | — | — | US | disclosed |
| US-7569326-B2 | Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-04 | — | — | US | disclosed |
| US-20080102407-A1 | Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-01 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20220107560-A1 | SULFONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | ETV6, KAT5, PKD1 | ALDH1A1 2965/4885TSHR 3390/4885CA1 3650/4885 |
| US-20230384676-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING PATTERN, POLYMER, AND COMPOUND | RER1, RFT1, RAD51 | ALDH1A1 347/4885TSHR 2652/4885CA1 471/4885 |
| US-20090297979-A1 | Polymerizable compound, polymer, positive resist composition, and patterning process using the same | PRRC2A, PUF60, POLR2B | ALDH1A1 3867/4885TSHR 4785/4885CA1 286/4885 |
| US-20230375928-A1 | Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process | NAF1, RALA, RSU1 | ALDH1A1 1459/4885TSHR 2101/4885CA1 491/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.