SCHEMBL7605828

SCHEMBL7605828

Nc1ccc(Oc2ccc(Cc3ccc(Oc4ccc(N)cc4)c(Br)c3)cc2Br)cc1

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 3/20 0.46
ALDH1A1 P00352 6/20 0.43
TDP1 Q9NUW8 3/20 0.43
CYP3A4 P08684 2/20 0.43
TSHR P16473 2/20 0.43
GAA P10253 2/20 0.41
SMN1; SMN2 Q16637 2/20 0.40
MEN1 O00255 2/20 0.40
KMT2A Q03164 2/20 0.40
MITF O75030 1/20 0.40
GFER P55789 1/20 0.40
NLRP1 Q9C000 1/20 0.40
NOD2 Q9HC29 1/20 0.40
MAOA P21397 2/20 0.38
MAPK1 P28482 1/20 0.38
L3MBTL1 Q9Y468 1/20 0.38
PDE7A Q13946 2/20 0.38
TAAR5 O14804 1/20 0.38
TAAR1 Q96RJ0 1/20 0.38
CYP19A1 P11511 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8579696 0.87 MAPT (0.43) MAPTALDH1A1TDP1CYP3A4TSHR
SCHEMBL8578368 0.84 CYP19A1 (0.44) MAPTALDH1A1TDP1CYP3A4TSHR
SCHEMBL7190064 0.83 MAPT (0.54) MAPTALDH1A1TDP1CYP3A4TSHR
SCHEMBL7555563 0.81 TTR (0.53) MAPTALDH1A1TDP1CYP3A4TSHR
SCHEMBL8914761 0.80 MAPT (0.50) MAPTALDH1A1TDP1CYP3A4TSHR
SCHEMBL2512315 0.79 ALDH1A1 (0.47) MAPTALDH1A1TDP1CYP3A4TSHR
SCHEMBL2511362 0.79 PDE7A (0.55) MAPTALDH1A1TDP1CYP3A4TSHR
SCHEMBL8153213 0.79 MAPT (0.48) MAPTALDH1A1TDP1CYP3A4TSHR
SCHEMBL8152726 0.78 CA2 (0.61) ALDH1A1TDP1GAASMN1; SMN2MAPK1
SCHEMBL7549968 0.78 CFD (0.55) MAPTALDH1A1TDP1CYP3A4TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-4435560-A HEAT RESISTANT, GOOD PROCESSABILITY HITACHI, LTD. (JP) 1984-03-06 US claimed
US-20020151659-A1 Formed from 6,6'-bis(2-(4-fluorophenyl)-4- phenylquinoline) and 4,4'-(1,1,1,3,3,3-hexafluoro-2,2-propylidene)bisphenol and 2,2-bis((4-maleimidophenoxy)phenyl)propane; dielectrics HITACHI CHEMICAL CO., LTD. (JP) 2002-10-17 US disclosed
US-6462148-B1 RESIN COMPOSITION COMPRISING A POLYMER CONTAINING A QUINOLINE RING AND A THERMOSETTING RESIN, AN INSULATING MATERIAL CONSTITUTED BY SAID RESIN COMPOSITION AND AN ADHESIVE FILM, PARTICULARLY A RESIN FOR AN INTERLAYER INSULATION FILM HITACHI CHEMICAL CO., LTD. (JP) 2002-10-08 US disclosed
EP-0604885-B1 Liquid crystal display device HOECHST AG (DE) 1997-12-10 EP disclosed
US-5670084-A Alignment layer material for liquid crystal display devices HOECHST AKTIENGESELLSCHAFT (DE) 1997-09-23 US disclosed
US-5656340-A Liquid crystal display device HOECHST AKTIENGESELLSCHAFT (DE) 1997-08-12 US disclosed
EP-0476589-B1 Multi-layer wiring substrate and production thereof HITACHI LTD (JP) 1996-06-12 EP disclosed
EP-0708149-A1 Alignment layer material for liquid crystal display devices HOECHST AKTIENGESELLSCHAFT (DE) 1996-04-24 EP disclosed
EP-0690334-A2 Liquid crystal display device HOECHST AKTIENGESELLSCHAFT (DE) 1996-01-03 EP disclosed
US-5437813-A A thin alignment layer comprising an aromatic polyamide-polysiloxane block homo- or copolymer with different content of polysiloxane to adjust optical pretilt angle HOECHST AKTIENGESELLSCHAFT (DE) 1995-08-01 US disclosed
EP-0476589-A2 Multi-layer wiring substrate and production thereof HITACHI, LTD. (JP) 1992-03-25 EP disclosed
US-5037862-A Excellent mechanical stability in printing HITACHI CHEMICAL COMPANY, LTD. (JP) 1991-08-06 US disclosed
US-4954612-A ORIENTATION CONTROL FOR LIQUID CRYSTAL DISPLAY HITACHI CHEMICAL CO., LTD. (JP) 1990-09-04 US disclosed
EP-0336536-A2 Organic-solvent soluble polyimide and production thereof Hitachi Chemical Co., Ltd. (JP) 1989-10-11 EP disclosed
US-4791157-A REACTING TRIMELLITIC ACID WITH AROMATIC DIAMINE WITH ETHER GROUPS HITACHI CHEMICAL CO. (JP) 1988-12-13 US disclosed
US-4758875-A Resin encapsulated semiconductor device HITACHI, LTD. (JP) 1988-07-19 US disclosed
EP-0032745-B1 ETHER IMIDES AND PROCESS FOR PRODUCING THE SAME Hitachi, Ltd. (JP) 1987-01-07 EP disclosed
US-4460783-A AMIDATION, CYCLIZATION, DEHYDRATION HITACHI, LTD. (JP) 1984-07-17 US disclosed
US-4435560-A HEAT RESISTANT, GOOD PROCESSABILITY HITACHI, LTD. (JP) 1984-03-06 US disclosed
EP-0032745-A2 Ether imides and process for producing the same Hitachi, Ltd. (JP) 1981-07-29 EP disclosed