Water

Water

SCHEMBL766417

CCCC[N+](CCCC)(CCCC)CCCC[N+](CCCC)(CCCC)CCCC.[OH-].[OH-]

nearest known ligand 0.87

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQ

The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
SLC22A1 O15245 3/20 0.86
SLC22A2 O15244 1/20 0.86
ALDH1A1 P00352 1/20 0.75
TP53 P04637 1/20 0.75
CYP3A4 P08684 1/20 0.75
ALOX15 P16050 1/20 0.75
TSHR P16473 1/20 0.75
ALOX12 P18054 1/20 0.75
SMN1; SMN2 Q16637 1/20 0.75
HIF1A Q16665 1/20 0.75
HSD17B10 Q99714 1/20 0.75
DNM1 Q05193 7/20 0.67
APAF1 O14727 1/20 0.55
HSP90AA1 P07900 1/20 0.55
RAD52 P43351 1/20 0.55

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Water SCHEMBL3485498 1.00 SLC22A1 (0.86) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Water SCHEMBL3484887 1.00 SLC22A1 (0.86) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Water SCHEMBL3485332 1.00 SLC22A1 (0.86) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Water SCHEMBL876408 0.97 SLC22A1 (0.87) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Water SCHEMBL3486043 0.97 SLC22A1 (0.87) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Water SCHEMBL875909 0.97 SLC22A1 (0.87) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Water SCHEMBL3485233 0.97 SLC22A1 (0.87) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Water SCHEMBL3485231 0.97 SLC22A1 (0.87) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Water SCHEMBL3485321 0.97 SLC22A1 (0.87) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Tetrahexylammonium SCHEMBL5469443 0.97 SLC22A1 (0.87) SLC22A1SLC22A2ALDH1A1TP53CYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9803108-B1 Aqueous compositions of stabilized aminosilane group containing silica particles ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC. (US) 2017-10-31 US claimed
US-10781343-B2 Acid polishing composition and method of polishing a substrate having enhanced defect inhibition ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC. (US) 2020-09-22 US disclosed
US-20200239734-A1 ACID POLISHING COMPOSITION AND METHOD OF POLISHING A SUBSTRATE HAVING ENHANCED DEFECT INHIBITION U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2020-07-30 US disclosed
US-10316218-B2 Aqueous silica slurry compositions for use in shallow trench isolation and methods of using them ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC. (US) 2019-06-11 US disclosed
US-20190092970-A1 AQUEOUS LOW ABRASIVE SILICA SLURRY AND AMINE CARBOXYLIC ACID COMPOSITIONS FOR USE IN SHALLOW TRENCH ISOLATION AND METHODS OF MAKING AND USING THEM ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC. 2019-03-28 US disclosed
US-10221336-B2 Aqueous silica slurry compositions for use in shallow trench isolation and methods of using them rohm and Hass Electronic Materials CMP Holdings, Inc. (US) 2019-03-05 US disclosed
US-20180362805-A1 AQUEOUS SILICA SLURRY COMPOSITIONS FOR USE IN SHALLOW TRENCH ISOLATION AND METHODS OF USING THEM U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2018-12-20 US disclosed
US-10119048-B1 Low-abrasive CMP slurry compositions with tunable selectivity ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC. (US) 2018-11-06 US disclosed
US-9803108-B1 Aqueous compositions of stabilized aminosilane group containing silica particles ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC. (US) 2017-10-31 US disclosed
US-9803108-B1 Aqueous compositions of stabilized aminosilane group containing silica particles ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC. (US) 2017-10-31 US disclosed
US-9783702-B1 Aqueous compositions of low abrasive silica particles ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS INC. (US) 2017-10-10 US disclosed
US-9275899-B2 Chemical mechanical polishing composition and method for polishing tungsten ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC. (US) 2016-03-01 US disclosed
US-20150380295-A1 CHEMICAL MECHANICAL POLISHING COMPOSITION AND METHOD FOR POLISHING TUNGSTEN U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2015-12-31 US disclosed
US-8865013-B2 Method for chemical mechanical polishing tungsten ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC. (US) 2014-10-21 US disclosed
US-8568610-B2 Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC. (US) 2013-10-29 US disclosed
US-8513126-B2 Slurry composition having tunable dielectric polishing selectivity and method of polishing a substrate ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC. (US) 2013-08-20 US disclosed
US-20130045598-A1 Method for chemical mechanical polishing tungsten ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC. (US) 2013-02-21 US disclosed
US-20120070990-A1 Slurry Composition Having Tunable Dielectric Polishing Selectivity And Method Of Polishing A Substrate ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC. 2012-03-22 US disclosed
US-20120070989-A1 Stabilized, Concentratable Chemical Mechanical Polishing Composition And Method Of Polishing A Substrate ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC. 2012-03-22 US disclosed