Water

Water

SCHEMBL3485332

CCCCC[N+](CCCC)(CCCC)CCCCC.[OH-]

nearest known ligand 0.87

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQ

The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
SLC22A1 O15245 3/20 0.86
SLC22A2 O15244 1/20 0.86
ALDH1A1 P00352 1/20 0.75
TP53 P04637 1/20 0.75
CYP3A4 P08684 1/20 0.75
ALOX15 P16050 1/20 0.75
TSHR P16473 1/20 0.75
ALOX12 P18054 1/20 0.75
SMN1; SMN2 Q16637 1/20 0.75
HIF1A Q16665 1/20 0.75
HSD17B10 Q99714 1/20 0.75
DNM1 Q05193 7/20 0.67
APAF1 O14727 1/20 0.55
HSP90AA1 P07900 1/20 0.55
RAD52 P43351 1/20 0.55

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Water SCHEMBL3485498 1.00 SLC22A1 (0.86) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Water SCHEMBL766417 1.00 SLC22A1 (0.86) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Water SCHEMBL3484887 1.00 SLC22A1 (0.86) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Water SCHEMBL876408 0.97 SLC22A1 (0.87) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Water SCHEMBL3486043 0.97 SLC22A1 (0.87) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Water SCHEMBL875909 0.97 SLC22A1 (0.87) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Water SCHEMBL3485233 0.97 SLC22A1 (0.87) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Water SCHEMBL3485231 0.97 SLC22A1 (0.87) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Water SCHEMBL3485321 0.97 SLC22A1 (0.87) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Tetrahexylammonium SCHEMBL5469443 0.97 SLC22A1 (0.87) SLC22A1SLC22A2ALDH1A1TP53CYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 310 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2026100508-A1 RESIN COMPOSITION, CURED PRODUCT, LAMINATE, METHOD FOR PRODUCING CURED PRODUCT, METHOD FOR PRODUCING LAMINATE, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND RESIN 富士フイルム株式会社 2026-05-15 WO disclosed
US-12619147-B2 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2026-05-05 US disclosed
US-12599937-B2 Water-based, high-efficiency chemical reagent for substrate surface particle removal APPLIED MATERIALS, INC. (US) 2026-04-14 US disclosed
US-12535734-B2 Actinic-ray-sensitive or radiation-sensitive resin composition, actinic-ray-sensitive or radiation-sensitive film, method for forming pattern, and method for producing electronic device FUJIFILM CORPORATION (JP) 2026-01-27 US disclosed
US-20260003281-A1 RESIN COMPOSITION, DIAMINE COMPOUND, CURED SUBSTANCE, LAMINATE, MANUFACTURING METHOD FOR CURED SUBSTANCE, MANUFACTURING METHOD FOR LAMINATE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2026-01-01 US disclosed
US-20260003274-A1 PHOTOSENSITIVE RESIN COMPOSITION, CURED SUBSTANCE, LAMINATE, MANUFACTURING METHOD FOR CURED SUBSTANCE, MANUFACTURING METHOD FOR LAMINATE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJIFILM CORP (JP) 2026-01-01 US disclosed
US-20260003276-A1 PHOTOSENSITIVE RESIN COMPOSITION, CURED SUBSTANCE, LAMINATE, MANUFACTURING METHOD FOR CURED SUBSTANCE, MANUFACTURING METHOD FOR LAMINATE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2026-01-01 US disclosed
US-12510822-B2 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, pattern forming method, method for manufacturing electronic device, actinic ray-sensitive or radiation-sensitive resin composition for manufacturing photomask, and method for manufacturing photomask FUJIFILM CORPORATION (JP) 2025-12-30 US disclosed
US-20250376552-A1 RESIN COMPOSITION, CURED SUBSTANCE, LAMINATE, MANUFACTURING METHOD FOR CURED SUBSTANCE, MANUFACTURING METHOD FOR LAMINATE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJIFILM CORP (JP) 2025-12-11 US disclosed
US-12481218-B2 Treatment liquid, method for washing substrate, and method for removing resist FUJIFILM CORPORATION (JP) 2025-11-25 US disclosed
US-20160131976-A1 RESIST COMPOSITION FOR SEMICONDUCTOR MANUFACTURING PROCESS; RESIST FILM, RESIST-COATED MASK BLANKS, PHOTOMASK, AND RESIST PATTERNING METHOD USING SAID RESIST COMPOSITION; ELECTRONIC-DEVICE MANUFACTURING METHOD; AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-05-12 US disclosed
US-20160116840-A1 COMPOUND, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM USING SAME, RESIST-COATED MASK BLANK, PHOTOMASK, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-04-28 US disclosed
US-20160011517-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD OF MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-01-14 US disclosed
EP-2891686-A1 DISPERSION COMPOSITION, AND CURABLE COMPOSITION, TRANSPARENT FILM, MICROLENS AND SOLID-STATE IMAGING ELEMENT USING SAME FUJIFILM Corporation (JP) 2015-07-08 EP disclosed
EP-2891685-A1 DISPERSION COMPOSITION, AND CURABLE COMPOSITION, TRANSPARENT FILM, MICROLENS AND SOLID-STATE IMAGING ELEMENT USING SAME FUJIFILM Corporation (JP) 2015-07-08 EP disclosed
EP-2891687-A1 DISPERSION COMPOSITION, AND CURABLE COMPOSITION, TRANSPARENT FILM, MICROLENS AND SOLID-STATE IMAGING ELEMENT USING SAME, AND POLYMER COMPOUND FUJIFILM Corporation (JP) 2015-07-08 EP disclosed
US-20150166816-A1 DISPERSION COMPOSITION, CURABLE COMPOSITION USING THE SAME, TRANSPARENT FILM, MICROLENS, AND SOLID-STATE IMAGING DEVICE FUJIFILM CORPORATION (JP) 2015-06-18 US disclosed
US-20150166783-A1 DISPERSION COMPOSITION, CURABLE COMPOSITION USING THE SAME, TRANSPARENT FILM, MICROLENS, AND SOLID-STATE IMAGING DEVICE FUJIFILM CORPORATION (JP) 2015-06-18 US disclosed
US-20150166780-A1 DISPERSION COMPOSITION, AND CURABLE COMPOSITION, TRANSPARENT FILM, MICROLENS AND SOLID-STATE IMAGING DEVICE USING SAME, AND POLYMER COMPOUND FUJIFILM CORPORATION (JP) 2015-06-18 US disclosed
US-20100283133-A1 FILM-FORMING COMPOSITION, INSULATING FILM WITH LOW DIELECTRIC CONSTANT, FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE HAMADA YOSHITAKA 2010-11-11 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (8 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12510822-B2 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, pattern forming method, method for manufacturing electronic device, actinic ray-sensitive or radiation-sensitive resin composition for manufacturing photomask, and method for manufacturing photomask LCP1, ARL1, ACTR2 SLC22A1 4466/4885SLC22A2 4449/4885ALDH1A1 2858/4885
US-20260003281-A1 RESIN COMPOSITION, DIAMINE COMPOUND, CURED SUBSTANCE, LAMINATE, MANUFACTURING METHOD FOR CURED SUBSTANCE, MANUFACTURING METHOD FOR LAMINATE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE SEM1, SAT1, ASIC1 SLC22A1 3264/4885SLC22A2 3587/4885ALDH1A1 50/4885
US-20160116840-A1 COMPOUND, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM USING SAME, RESIST-COATED MASK BLANK, PHOTOMASK, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE CHRM1, ESR1, RER1 SLC22A1 4435/4885SLC22A2 4579/4885ALDH1A1 3574/4885
US-12535734-B2 Actinic-ray-sensitive or radiation-sensitive resin composition, actinic-ray-sensitive or radiation-sensitive film, method for forming pattern, and method for producing electronic device RAD51, ACTN1, GLRA1 SLC22A1 3563/4885SLC22A2 3807/4885ALDH1A1 2191/4885
US-12619147-B2 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, pattern forming method, and method for manufacturing electronic device RAD51, COL1A1, CROCC SLC22A1 4346/4885SLC22A2 4658/4885ALDH1A1 1614/4885
US-20260003274-A1 PHOTOSENSITIVE RESIN COMPOSITION, CURED SUBSTANCE, LAMINATE, MANUFACTURING METHOD FOR CURED SUBSTANCE, MANUFACTURING METHOD FOR LAMINATE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE SEM1, ASIC1, SMARCB1 SLC22A1 4128/4885SLC22A2 4178/4885ALDH1A1 1444/4885
US-20260003276-A1 PHOTOSENSITIVE RESIN COMPOSITION, CURED SUBSTANCE, LAMINATE, MANUFACTURING METHOD FOR CURED SUBSTANCE, MANUFACTURING METHOD FOR LAMINATE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE RER1, SEM1, RAD51 SLC22A1 4390/4885SLC22A2 4414/4885ALDH1A1 460/4885
US-12599937-B2 Water-based, high-efficiency chemical reagent for substrate surface particle removal STUB1, CD2, EPCAM SLC22A1 4668/4885SLC22A2 4601/4885ALDH1A1 528/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.