Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KDM4E | B2RXH2 | 4/20 | 0.51 |
| ▸ | AKR1C3 | P42330 | 1/20 | 0.49 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.44 |
| ▸ | GAA | P10253 | 2/20 | 0.44 |
| ▸ | MEN1 | O00255 | 3/20 | 0.41 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.41 |
| ▸ | CYP1A2 | P05177 | 2/20 | 0.41 |
| ▸ | MAPT | P10636 | 2/20 | 0.41 |
| ▸ | MITF | O75030 | 1/20 | 0.41 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.41 |
| ▸ | PKM | P14618 | 1/20 | 0.41 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.41 |
| ▸ | RAB9A | P51151 | 1/20 | 0.41 |
| ▸ | CCR6 | P51684 | 1/20 | 0.41 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.41 |
| ▸ | HPGD | P15428 | 2/20 | 0.41 |
| ▸ | GLA | P06280 | 1/20 | 0.41 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.41 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.41 |
| ▸ | APEX1 | P27695 | 8/20 | 0.39 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL767171 | 1.00 | KDM4E (0.51) | KDM4EAKR1C3ALDH1A1GAAMEN1 | |
| SCHEMBL1521190 | 0.86 | KDM4E (0.50) | KDM4EALDH1A1GAAMEN1KMT2A | |
| SCHEMBL819646 | 0.85 | KDM4E (0.68) | KDM4EAKR1C3ALDH1A1GAAMEN1 | |
| SCHEMBL36974 | 0.85 | KDM4E (0.68) | KDM4EAKR1C3ALDH1A1GAAMEN1 | |
| SCHEMBL909620 | 0.83 | MTNR1A (0.44) | KDM4EALDH1A1GAAMEN1KMT2A | |
| SCHEMBL8746662 | 0.83 | AKR1C3 (0.59) | KDM4EAKR1C3ALDH1A1CYP2C9HPGD | |
| SCHEMBL8746663 | 0.81 | AKR1C3 (0.50) | KDM4EAKR1C3ALDH1A1GAAMEN1 | |
| SCHEMBL8746683 | 0.81 | AKR1C3 (0.50) | KDM4EAKR1C3ALDH1A1GAAMEN1 | |
| SCHEMBL11142704 | 0.81 | AKR1C3 (0.55) | KDM4EAKR1C3ALDH1A1GAAMEN1 | |
| SCHEMBL8746664 | 0.81 | AKR1C3 (0.55) | KDM4EAKR1C3ALDH1A1GAAMEN1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 39 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6455416-B1 | Developer soluble dyed BARC for dual damascene process | ADVANCED MICRO DEVICES, INC. | 2002-09-24 | — | — | US | claimed |
| US-11392037-B2 | Resist underlayer film forming composition containing silicone having cyclic amino group | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2022-07-19 | — | — | US | disclosed |
| US-9760006-B2 | Silicon-containing resist underlayer film forming composition having urea group | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2017-09-12 | — | — | US | disclosed |
| CN-103748517-B | Silicon-containing resist underlayer film-forming composition having sulfone structure | 日产化学工业株式会社 | 2017-04-19 | — | — | CN | disclosed |
| US-9217921-B2 | Resist underlayer film forming composition containing silicon having sulfide bond | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-12-22 | — | — | US | disclosed |
| US-9093279-B2 | Thin film forming composition for lithography containing titanium and silicon | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-07-28 | — | — | US | disclosed |
| US-9023588-B2 | Resist underlayer film forming composition containing silicon having nitrogen-containing ring | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-05-05 | — | — | US | disclosed |
| US-8864894-B2 | Resist underlayer film forming composition containing silicone having onium group | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2014-10-21 | — | — | US | disclosed |
| US-8835093-B2 | Resist underlayer film forming composition containing silicon having anion group | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2014-09-16 | — | — | US | disclosed |
| US-8815494-B2 | Resist underlayer film forming composition containing silicon having anion group | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2014-08-26 | — | — | US | disclosed |
| US-20070275321-A1 | Methods for enhancing resolution of a chemically amplified photoresist | ADVANCED MICRO DEVICES, INC. | 2007-11-29 | — | — | US | disclosed |
| US-7056646-B1 | Use of base developers as immersion lithography fluid | ADVANCED MICRO DEVICES, INC. (US) | 2006-06-06 | — | — | US | disclosed |
| US-6861209-B2 | Method to enhance resolution of a chemically amplified photoresist | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2005-03-01 | — | — | US | disclosed |
| US-20040106070-A1 | Method to enhance resolution of a chemically amplified photoresist | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2004-06-03 | — | — | US | disclosed |
| US-6534243-B1 | A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature | ADVANCED MICRO DEVICES, INC. | 2003-03-18 | — | — | US | disclosed |
| US-6492075-B1 | COATING WITH CLEAVING COMPOUND TO CONTROLLABLY DECREASE SIZE OF DEVELOPED RESIST | ADVANCED MICRO DEVICES, INC. | 2002-12-10 | — | — | US | disclosed |
| US-6455416-B1 | Developer soluble dyed BARC for dual damascene process | ADVANCED MICRO DEVICES, INC. | 2002-09-24 | — | — | US | disclosed |
| US-6274289-B1 | Chemical resist thickness reduction process | ADVANCED MICRO DEVICES, INC. | 2001-08-14 | — | — | US | disclosed |
| EP-0480314-B1 | Polyoxymethylene moulding compositions having an increased thermal stability and a reduced emission of formaldehyde | DEGUSSA (DE) | 1996-06-05 | — | — | EP | disclosed |
| EP-0480314-A2 | Polyoxymethylene moulding compositions having an increased thermal stability and a reduced emission of formaldehyde | DEGUSSA AG (DE) | 1992-04-15 | — | — | EP | disclosed |