Known targets — ChEMBL curated mechanism
ACEADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2BTKCACNA1CCACNA1DCACNA1FCACNA1SCCR5CPT1BCPT2DPP4DRD1DRD2EGFRERBB2ERBB4HRH1HRH3HTR1AHTR2AHTR2BHTR2CHTR4JAK1JAK2JAK3MPLMTORPPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PPARGSLC6A2SLC6A3SLC6A4SMOTYK2pol
The experimentally established mechanism targets of 4-Vinylphenol. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | DPP4 known ✓ | P27487 | 2/20 | 0.63 |
| ▸ | TYR | P14679 | 3/20 | 0.63 |
| ▸ | AKR1B10 | O60218 | 3/20 | 0.63 |
| ▸ | AKR1B1 | P15121 | 3/20 | 0.63 |
| ▸ | CA12 | O43570 | 3/20 | 0.63 |
| ▸ | CA1 | P00915 | 3/20 | 0.63 |
| ▸ | CA2 | P00918 | 3/20 | 0.63 |
| ▸ | CA7 | P43166 | 3/20 | 0.63 |
| ▸ | CA9 | Q16790 | 3/20 | 0.63 |
| ▸ | CA14 | Q9ULX7 | 3/20 | 0.63 |
| ▸ | PKM | P14618 | 2/20 | 0.63 |
| ▸ | CA3 | P07451 | 2/20 | 0.63 |
| ▸ | CA4 | P22748 | 2/20 | 0.63 |
| ▸ | CA6 | P23280 | 2/20 | 0.63 |
| ▸ | CA5A | P35218 | 2/20 | 0.63 |
| ▸ | CA5B | Q9Y2D0 | 2/20 | 0.63 |
| ▸ | ESR1 | P03372 | 1/20 | 0.63 |
| ▸ | HCAR2 | Q8TDS4 | 1/20 | 0.63 |
| ▸ | ESR2 | Q92731 | 1/20 | 0.63 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.55 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| 4-Vinylphenol SCHEMBL28399759 | 0.89 | TYR (0.54) | TYRAKR1B10AKR1B1CA12CA1 | |
| 4-Vinylphenol SCHEMBL28941792 | 0.89 | ALDH1A1 (0.55) | TYRAKR1B10AKR1B1CA12CA1 | |
| 4-Vinylphenol SCHEMBL4384304 | 0.84 | ALDH1A1 (0.52) | TYRAKR1B10AKR1B1CA12CA1 | |
| 4-Vinylphenol SCHEMBL11251558 | 0.84 | ALDH1A1 (0.50) | TYRAKR1B10AKR1B1CA12CA1 | |
| Fumaric Acid SCHEMBL30327066 | 0.83 | MAPT (0.73) | TYRAKR1B10AKR1B1CA12CA1 | |
| 4-Vinylphenol SCHEMBL59328 | 0.83 | — | — | |
| Fumaric Acid SCHEMBL11213285 | 0.83 | MAPT (0.73) | TYRAKR1B10AKR1B1CA12CA1 | |
| 4-Vinylphenol SCHEMBL170622 | 0.83 | ALDH1A1 (0.69) | TYRAKR1B1CA12CA1CA2 | |
| Maleic Acid SCHEMBL11213277 | 0.83 | MAPT (0.73) | TYRAKR1B10AKR1B1CA12CA1 | |
| Styrene SCHEMBL27511200 | 0.83 | ALDH1A1 (0.50) | TYRAKR1B10AKR1B1CA12CA1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6426175-B2 | FORMING A GATE STACK LAYER ON A SUBSTRATE, PATTERNING THE STACK TO DEFINE A GATE AND TWO SPACERS, ONE OF THE SPACER AND GATE HAVE SPECIFIC WIDTH AND GATE HAS WIDTH THAT IS TWICE THE WIDTH OF ONE SPACE, FORMING SOURCE AND DRAIN REGIONS | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2002-07-30 | — | — | US | disclosed |
| US-6420766-B1 | Transistor having raised source and drain | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2002-07-16 | — | — | US | disclosed |
| US-20010021577-A1 | METHOD FOR FORMING SIDEWALL SPACERS USING FREQUENCY DOUBLING HYBRID RESIST AND DEVICE FORMED THEREBY | BROWN JEFFREY S (US) | 2001-09-13 | — | — | US | disclosed |
| US-6255178-B1 | Method for forming transistors with raised source and drains and device formed thereby | INTERNATIONAL BUSINESS MACHINES CORP. | 2001-07-03 | — | — | US | disclosed |
| US-6245488-B1 | EXPOSING RESIST TO ACTINIC RADIATION AT AN INTERMEDIATE ENERGY FIRST THROUGH A MASK HAVING BLOCKING FEATURE SHAPES THEN THROUGH A SECOND MASK HAVING TRIM SHAPES WHICH LINK THE FEATURES, DEVELOPING AND TRIMMING THE LINKING PORTION | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2001-06-12 | — | — | US | disclosed |
| US-20010003034-A1 | FABRICATION OF A HIGH DENSITY LONG CHANNEL DRAM GATE WITH OR WITHOUT A GROOVED GATE | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2001-06-07 | — | — | US | disclosed |
| US-6232639-B1 | Method and structure to reduce latch-up using edge implants | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2001-05-15 | — | — | US | disclosed |
| US-6218704-B1 | ESD protection structure and method | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2001-04-17 | — | — | US | disclosed |
| US-6210866-B1 | Method for forming features using self-trimming by selective etch and device formed thereby | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2001-04-03 | — | — | US | disclosed |
| US-6147394-A | Method of photolithographically defining three regions with one mask step and self aligned isolation structure formed thereby | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2000-11-14 | — | — | US | disclosed |
| US-6100013-A | Method for forming transistors with raised source and drains and device formed thereby | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2000-08-08 | — | — | US | disclosed |
| US-6033949-A | Method and structure to reduce latch-up using edge implants | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2000-03-07 | — | — | US | disclosed |
| US-6014422-A | Method for varying x-ray hybrid resist space dimensions | INTERNAITONAL BUSINESS MACHINES CORPORATION (US) | 2000-01-11 | — | — | US | disclosed |
| US-6007968-A | Method for forming features using frequency doubling hybrid resist and device formed thereby | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1999-12-28 | — | — | US | disclosed |
| US-5976768-A | Method for forming sidewall spacers using frequency doubling hybrid resist and device formed thereby | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1999-11-02 | — | — | US | disclosed |
| US-5972570-A | Method of photolithographically defining three regions with one mask step and self aligned isolation structure formed thereby | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1999-10-26 | — | — | US | disclosed |
| US-5939767-A | Structure and process for buried diode formation in CMOS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1999-08-17 | — | — | US | disclosed |
| US-5882967-A | Process for buried diode formation in CMOS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1999-03-16 | — | — | US | disclosed |
| US-5861330-A | FORMING IMPLANTS WITH HYBRID RESISTS WHICH DO NOT REQUIRE ADDITIONAL MASKING STEPS AT THE WELL EDGES; IMPLANTS REDUCE THE LIFETIME OF MINORITY CARRIERS IN THE PARASITIC TRANSISTOR, REDUCING GAIN OF THE PARASITIC TRANSISTOR | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1999-01-19 | — | — | US | disclosed |
| US-4797183-A | POLYMER CONTAINING CARBOXY OR PHOSPHORUS ACID GROUP | KAO CORPORATION (JP) | 1989-01-10 | — | — | US | disclosed |