Perchlorate

Perchlorate

SCHEMBL7741224

COc1ccc(-c2ccc(-c3ccccc3)[o+]c2-c2ccccc2)cc1.[O-][Cl+3]([O-])([O-])[O-]

nearest known ligand 0.50

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Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ABL1 P00519 3/20 0.50
ABCB1 P08183 3/20 0.50
BCR P11274 3/20 0.50
NPC1 O15118 4/20 0.48
RAB9A P51151 4/20 0.48
KDM4E B2RXH2 2/20 0.48
ALDH1A1 P00352 2/20 0.48
SMN1; SMN2 Q16637 2/20 0.48
MITF O75030 1/20 0.48
HTT P42858 1/20 0.48
BACE1 P56817 4/20 0.45
LMNA P02545 2/20 0.43
MAPT P10636 2/20 0.43
MEN1 O00255 1/20 0.42
KMT2A Q03164 1/20 0.42
LTA4H P09960 1/20 0.42
ACACA Q13085 1/20 0.41
NPSR1 Q6W5P4 1/20 0.41
TDP1 Q9NUW8 1/20 0.41
L3MBTL1 Q9Y468 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Perchlorate SCHEMBL7745399 0.85 CYP3A4 (0.40) ABL1ABCB1BCRNPC1RAB9A
Perchlorate SCHEMBL7741241 0.82 LTA4H (0.49) NPC1RAB9AKDM4EALDH1A1SMN1; SMN2
SCHEMBL8049768 0.82 BACE1 (0.36) ALDH1A1BACE1TDP1
Perchlorate SCHEMBL9175221 0.78 NPC1 (0.61) ABL1ABCB1BCRNPC1RAB9A
Perchlorate SCHEMBL9170292 0.78 NPC1 (0.61) ABL1ABCB1BCRNPC1RAB9A
Perchlorate SCHEMBL7903126 0.78 NPC1 (0.61) ABL1ABCB1BCRNPC1RAB9A
Perchlorate SCHEMBL11597519 0.77 NPC1 (0.47) ABL1ABCB1BCRNPC1RAB9A
SCHEMBL7745719 0.76 LTA4H (0.54) LTA4HHDAC4HDAC2HDAC8
SCHEMBL11819228 0.76 ABL1 (0.73) ABL1ABCB1BCRNPC1RAB9A
Perchlorate SCHEMBL6809683 0.76 ABL1 (0.42) ABL1ABCB1BCRNPC1RAB9A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-4756989-A Aluminum or silicon substrate, copolymer resist layer comprising vinyl aromatic, ethylenically unsaturated units ASAHI KASEI KOGYO KABUSHIKI KAISHA (JP) 1988-07-12 US claimed
US-6180320-B1 Method of manufacturing a semiconductor device having a fine pattern, and semiconductor device manufactured thereby MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 2001-01-30 US disclosed
US-4756989-A Aluminum or silicon substrate, copolymer resist layer comprising vinyl aromatic, ethylenically unsaturated units ASAHI KASEI KOGYO KABUSHIKI KAISHA (JP) 1988-07-12 US disclosed