Predicted protein targets (top 8)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ACE | P12821 | 9/20 | 0.64 |
| ▸ | POLB | P06746 | 3/20 | 0.53 |
| ▸ | ELANE | P08246 | 1/20 | 0.51 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.50 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.50 |
| ▸ | ABCB11 | O95342 | 1/20 | 0.49 |
| ▸ | CHEK1 | O14757 | 1/20 | 0.47 |
| ▸ | JAK2 | O60674 | 1/20 | 0.47 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9470918 | 0.86 | ACE (0.61) | ACEPOLBTDP1L3MBTL1ABCB11 | |
| SCHEMBL5720519 | 0.84 | ACE (0.60) | ACEPOLBTDP1L3MBTL1CHEK1 | |
| SCHEMBL4627296 | 0.84 | ACE (0.60) | ACEPOLBTDP1L3MBTL1CHEK1 | |
| SCHEMBL7274646 | 0.82 | ACE (0.62) | ACEPOLBTDP1L3MBTL1ABCB11 | |
| SCHEMBL14067913 | 0.82 | ACE (0.59) | ACEPOLBTDP1L3MBTL1CHEK1 | |
| SCHEMBL7274651 | 0.82 | ACE (0.62) | ACEPOLBTDP1L3MBTL1ABCB11 | |
| SCHEMBL66872 | 0.82 | ACE (0.59) | ACEPOLBTDP1L3MBTL1CHEK1 | |
| SCHEMBL2080858 | 0.82 | ACE (0.59) | ACEPOLBTDP1L3MBTL1CHEK1 | |
| SCHEMBL66871 | 0.82 | ACE (0.59) | ACEPOLBTDP1L3MBTL1CHEK1 | |
| SCHEMBL29707284 | 0.82 | ACE (0.59) | ACEPOLBTDP1L3MBTL1CHEK1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230367214-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-16 | — | — | US | disclosed |
| US-20230367213-A1 | MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-16 | — | — | US | disclosed |
| US-20230367214-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-16 | — | — | US | disclosed |
| US-20230367213-A1 | MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-16 | — | — | US | disclosed |
| EP-4276533-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2023-11-15 | — | — | EP | disclosed |
| US-20230194986-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-22 | — | — | US | disclosed |
| US-20230194986-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-22 | — | — | US | disclosed |
| EP-4198630-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2023-06-21 | — | — | EP | disclosed |
| US-11548844-B2 | Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-01-10 | — | — | US | disclosed |
| US-20220404701-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION, PHOTOMASK BLANK, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR PRODUCING POLYMER COMPOUND | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-12-22 | — | — | US | disclosed |
| US-9740098-B2 | Chemically amplified negative resist composition using novel onium salt and resist pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-08-22 | — | — | US | disclosed |
| US-9740098-B2 | Chemically amplified negative resist composition using novel onium salt and resist pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-08-22 | — | — | US | disclosed |
| US-9720323-B2 | Chemically amplified positive resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-08-01 | — | — | US | disclosed |
| US-9720323-B2 | Chemically amplified positive resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-08-01 | — | — | US | disclosed |
| EP-3081987-A2 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION USING NOVEL ONIUM SALT AND RESIST PATTERN FORMING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2016-10-19 | — | — | EP | disclosed |
| US-20160299428-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION USING NOVEL ONIUM SALT AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-10-13 | — | — | US | disclosed |
| EP-3062150-A2 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2016-08-31 | — | — | EP | disclosed |
| US-20160246175-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-08-25 | — | — | US | disclosed |
| EP-1114822-A2 | Indoles and tetrahydroisoquinolines containing alpha-keto oxadiazoles as serine protease inhibitors | Cortech Inc. (US) | 2001-07-11 | — | — | EP | disclosed |
| US-6100238-A | USEFUL AS INHIBITORS OF HUMAN NEUTROPHIL ELASTASE (HNE) FOR THE TREATMENT OF HNE-MEDIATED PROCESSES IMPLICATED IN CONDITIONS SUCH AS ADULT RESPIRATORY DISTRESS SYNDROME, SEPTIC SHOCK AND MULTIPLE ORGAN FAILURE | CORTECH INC. (US) | 2000-08-08 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11548844-B2 | Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming process | PARG, PCNA, PLK2 | ACE 2311/4885POLB 119/4885ELANE 3015/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.