Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HMGCR | P04035 | 5/20 | 0.34 |
| ▸ | CYP3A4 | P08684 | 3/20 | 0.31 |
| ▸ | USP2 | O75604 | 2/20 | 0.31 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.31 |
| ▸ | TSHR | P16473 | 2/20 | 0.31 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.31 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.31 |
| ▸ | NR1I2 | O75469 | 1/20 | 0.31 |
| ▸ | ABCB11 | O95342 | 1/20 | 0.31 |
| ▸ | NR3C1 | P04150 | 1/20 | 0.31 |
| ▸ | PGR | P06401 | 1/20 | 0.31 |
| ▸ | ABCB1 | P08183 | 1/20 | 0.31 |
| ▸ | ADORA3 | P0DMS8 | 1/20 | 0.31 |
| ▸ | CYP2C8 | P10632 | 1/20 | 0.31 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.31 |
| ▸ | ADRB3 | P13945 | 1/20 | 0.31 |
| ▸ | GABRA1 | P14867 | 1/20 | 0.31 |
| ▸ | ADRA2B | P18089 | 1/20 | 0.31 |
| ▸ | ADRA2C | P18825 | 1/20 | 0.31 |
| ▸ | DRD1 | P21728 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL16810007 | 0.90 | HMGCR (0.35) | HMGCRCYP3A4USP2ALDH1A1TSHR | |
| SCHEMBL13088271 | 0.90 | HMGCR (0.35) | HMGCRCYP3A4USP2ALDH1A1TSHR | |
| SCHEMBL13893167 | 0.90 | HMGCR (0.35) | HMGCRCYP3A4USP2ALDH1A1TSHR | |
| SCHEMBL47485 | 0.90 | HMGCR (0.35) | HMGCRCYP3A4USP2ALDH1A1TSHR | |
| SCHEMBL2740785 | 0.89 | — | — | |
| SCHEMBL18898211 | 0.88 | — | — | |
| SCHEMBL19335212 | 0.87 | — | — | |
| SCHEMBL111847 | 0.85 | HMGCR (0.35) | HMGCRCYP3A4USP2ALDH1A1TSHR | |
| SCHEMBL14713654 | 0.83 | — | — | |
| SCHEMBL47487 | 0.82 | HMGCR (0.33) | HMGCR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 79 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230242467-A1 | HIGH PURITY 4-HYDROXYSTYRENE SOLUTION, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING 4-HYDROXYSTYRENE POLYMER | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2023-08-03 | — | — | US | disclosed |
| US-20230137472-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-04 | — | — | US | disclosed |
| US-9989847-B2 | Onium salt compound, resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-05 | — | — | US | disclosed |
| US-9665002-B2 | Onium salt compound, resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-30 | — | — | US | disclosed |
| US-9665002-B2 | Onium salt compound, resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-30 | — | — | US | disclosed |
| US-9546133-B2 | Method for producing copolymer for semiconductor lithography containing reduced amount of metal impurities, and method for purifying polymerization initiator for production of copolymer | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2017-01-17 | — | — | US | disclosed |
| US-20160259242-A1 | NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-09-08 | — | — | US | disclosed |
| US-20160259242-A1 | NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-09-08 | — | — | US | disclosed |
| US-9411225-B2 | Photo acid generator, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-08-09 | — | — | US | disclosed |
| US-9411225-B2 | Photo acid generator, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-08-09 | — | — | US | disclosed |
| US-7960494-B2 | Copolymer for semiconductor lithography and process for producing the same | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2011-06-14 | — | — | US | disclosed |
| US-20100143842-A1 | METHOD FOR PRODUCING A COPOLYMER SOLUTION WITH A UNIFORM CONCENTRATION FOR SEMICONDUCTOR LITHOGRAPHY | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2010-06-10 | — | — | US | disclosed |
| US-7727704-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-01 | — | — | US | disclosed |
| US-7691561-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-04-06 | — | — | US | disclosed |
| US-20100062371-A1 | Copolymer and composition for semiconductor lithography and process for producing the copolymer | MARUZEN PETROCHEMICAL CO., LTD (JP) | 2010-03-11 | — | — | US | disclosed |
| US-20100047710-A1 | COPOLYMER FOR IMMERSION LITHOGRAPHY AND COMPOSITIONS | MARUZEN PETROCHEMICAL CO., LTD (JP) | 2010-02-25 | — | — | US | disclosed |
| US-20090306328-A1 | COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY AND PROCESS FOR PRODUCING THE SAME | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2009-12-10 | — | — | US | disclosed |
| US-20080008959-A1 | Resin comprising monomers of cyclopentyl- or cyclohexyl (meth)acrylate; hydroxyadamantyl (meth)acrylate; 3,8-epoxy-6-oxabicyclo[3.2.1]octyl (meth)acrylat;, and/or fluoroalkyl (meth)acrylate; ArF lithography; resolution; forms a pattern with high rectangularity | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-20080008960-A1 | Mixture of an adamantane acrylic ester resin which becomes soluble in alkaline developer under action of an acid and sulfonium salt acid generator; microlithography with advantages of resolution, pattern density dependence and mask fidelity; use in precise microfabrication | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-20070269741-A1 | Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2007-11-22 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20160259242-A1 | NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | LIFR, NHERF1, INSR | HMGCR 3456/4885CYP3A4 3605/4885USP2 3883/4885 |
| US-20230242467-A1 | HIGH PURITY 4-HYDROXYSTYRENE SOLUTION, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING 4-HYDROXYSTYRENE POLYMER | HAAO, HPD, IL4 | HMGCR 256/4885CYP3A4 111/4885USP2 1614/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.