SCHEMBL786179

SCHEMBL786179

CCC(C)C(=O)OC12CC3CC(CC(C3)C1)C2

nearest known ligand 0.46

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
CYP19A1 P11511 2/20 0.46
CYP17A1 P05093 1/20 0.46
ALDH1A1 P00352 4/20 0.42
KMT2A Q03164 5/20 0.41
SMN1; SMN2 Q16637 1/20 0.41
LMNA P02545 1/20 0.38
MEN1 O00255 4/20 0.37
L3MBTL1 Q9Y468 2/20 0.37
NAAA Q02083 1/20 0.37
NPSR1 Q6W5P4 1/20 0.36
MAPT P10636 1/20 0.36
ATM Q13315 1/20 0.36
EPHX2 P34913 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9924486 0.88 CYP19A1 (0.38) CYP19A1CYP17A1ALDH1A1KMT2ASMN1; SMN2
SCHEMBL18253450 0.86 CYP19A1 (0.37) CYP19A1CYP17A1ALDH1A1KMT2ASMN1; SMN2
SCHEMBL12430198 0.86 NPSR1 (0.51) CYP19A1CYP17A1ALDH1A1KMT2ASMN1; SMN2
SCHEMBL9916125 0.85 ALDH1A1 (0.43) CYP19A1CYP17A1ALDH1A1KMT2ASMN1; SMN2
SCHEMBL18253424 0.85 CYP19A1 (0.36) CYP19A1CYP17A1ALDH1A1KMT2ASMN1; SMN2
SCHEMBL15268375 0.84 CYP17A1 (0.35) CYP19A1CYP17A1ALDH1A1KMT2ASMN1; SMN2
SCHEMBL106291 0.84 HSD11B1 (0.38) CYP19A1CYP17A1ALDH1A1L3MBTL1NPSR1
SCHEMBL10031197 0.84 TSHR (0.37) CYP19A1CYP17A1ALDH1A1KMT2ASMN1; SMN2
SCHEMBL12296074 0.84 CYP19A1 (0.45) CYP19A1CYP17A1ALDH1A1SMN1; SMN2LMNA
SCHEMBL13136789 0.84 HMGCR (0.36) CYP19A1CYP17A1ALDH1A1KMT2ASMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 161 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230261252-A1 INORGANIC SOLID ELECTROLYTE-CONTAINING COMPOSITION, SHEET FOR ALL-SOLID STATE SECONDARY BATTERY, AND ALL-SOLID STATE SECONDARY BATTERY, AND MANUFACTURING METHODS FOR SHEET FOR ALL-SOLID STATE SECONDARY BATTERY AND ALL-SOLID STATE SECONDARY BATTERY FUJIFILM CORPORATION (JP) 2023-08-17 US disclosed
US-9952509-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2018-04-24 US disclosed
US-9822060-B2 Compound, resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-11-21 US disclosed
US-9810981-B2 Pattern formation method, etching method, electronic device manufacturing method, and electronic device FUJIFILM CORPORATION (JP) 2017-11-07 US disclosed
US-9760005-B2 Salt, acid generator, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-09-12 US disclosed
US-9758466-B2 Compound, resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-09-12 US disclosed
US-9726974-B2 Resin, photoresist composition, and method for producing photoresist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-08-08 US disclosed
US-9709892-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the same FUJIFILM CORPORATION (JP) 2017-07-18 US disclosed
US-20170184973-A1 ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, METHOD OF PRODUCING ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, STORAGE CONTAINER OF ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, PATTERN FORMING METHOD USING THE SAME, AND METHOD OF PRODUCING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-06-29 US disclosed
US-9671692-B2 Compound, resin and photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-06-06 US disclosed
US-20080081282-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed
US-7341817-B2 Photosensitive composition, compound for use in the photosensitive composition, and pattern forming method using the photosensitive composition FUJIFILM CORPORATION (JP) 2008-03-11 US disclosed
US-20070269741-A1 Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography MARUZEN PETROCHEMICAL CO., LTD. (JP) 2007-11-22 US disclosed
US-20070190453-A1 Resist cover film-forming material, process for forming resist pattern, semiconductor device and process for manufacturing the same FUJITSU LIMITED (JP) 2007-08-16 US disclosed
US-20070178407-A1 Polymer, resist protective coating material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-08-02 US disclosed
US-7232642-B2 Chemically amplified positive resist composition, a haloester derivative and a process for producing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-06-19 US disclosed
US-20070122736-A1 RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. 2007-05-31 US disclosed
US-20070122741-A1 Resist protective coating material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-31 US disclosed
US-7202014-B2 Stimulus-sensitive composition, compound and pattern formation method using the stimulation-sensitive composition FUJIFILM CORPORATION (JP) 2007-04-10 US disclosed
US-7189492-B2 Photosensitive composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-03-13 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20170184973-A1 ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, METHOD OF PRODUCING ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, STORAGE CONTAINER OF ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, PATTERN FORMING METHOD USING THE SAME, AND METHOD OF PRODUCING ELECTRONIC DEVICE MYB, NCL, SMYD2 CYP19A1 2523/4885CYP17A1 2561/4885ALDH1A1 4242/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.