SCHEMBL9924486

SCHEMBL9924486

CCC(C)C(=O)OC12CC3CC(C1)C(O)C(C3)C2

nearest known ligand 0.38

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
CYP19A1 P11511 2/20 0.38
CYP17A1 P05093 1/20 0.38
ALDH1A1 P00352 3/20 0.34
KMT2A Q03164 3/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
TSHR P16473 1/20 0.32
NPSR1 Q6W5P4 1/20 0.32
LMNA P02545 1/20 0.31
NAAA Q02083 1/20 0.30
MEN1 O00255 2/20 0.30
L3MBTL1 Q9Y468 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14929415 0.88 ALDH1A1 (0.36) CYP19A1CYP17A1ALDH1A1TSHRNPSR1
SCHEMBL786179 0.88 CYP19A1 (0.46) CYP19A1CYP17A1ALDH1A1KMT2ASMN1; SMN2
SCHEMBL14929438 0.86 EPHX2 (0.34) CYP19A1CYP17A1TSHRNPSR1
SCHEMBL18844982 0.84 CYP19A1 (0.34) CYP19A1CYP17A1ALDH1A1KMT2ASMN1; SMN2
SCHEMBL12705066 0.82 CYP19A1 (0.39) CYP19A1CYP17A1TSHRNPSR1NAAA
SCHEMBL12430198 0.81 NPSR1 (0.51) CYP19A1CYP17A1ALDH1A1KMT2ASMN1; SMN2
SCHEMBL13136789 0.79 HMGCR (0.36) CYP19A1CYP17A1ALDH1A1KMT2ASMN1; SMN2
SCHEMBL16659667 0.79 CYP17A1 (0.32) CYP19A1CYP17A1
SCHEMBL12705065 0.78 CYP19A1 (0.35) CYP19A1CYP17A1TSHRNPSR1NAAA
SCHEMBL2603076 0.78 NPSR1 (0.40) CYP19A1CYP17A1ALDH1A1KMT2ATSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 61 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11009793-B2 Monomer, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-05-18 US disclosed
US-10591819-B2 Monomer, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-03-17 US disclosed
US-20190235381-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-08-01 US disclosed
US-9790166-B2 Polymer, monomer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-10-17 US disclosed
US-9758609-B2 Monomer, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-9758609-B2 Monomer, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-9740100-B2 Hemiacetal compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-22 US disclosed
US-9740100-B2 Hemiacetal compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-22 US disclosed
US-20170226252-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-10 US disclosed
US-20170226252-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-10 US disclosed
US-8420290-B2 Acetal compounds and their preparation, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD (JP) 2013-04-16 US disclosed
US-20130017484-A1 POLYMERIZABLE ESTER COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-17 US disclosed
US-20120308932-A1 POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS USING SAID CHEMICALLY AMPLIFIED RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-12-06 US disclosed
US-20120148945-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-06-14 US disclosed
US-20120077121-A1 FLUOROALCOHOL, FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-03-29 US disclosed
US-20110250539-A1 FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-10-13 US disclosed
US-20110151381-A1 FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-06-23 US disclosed
US-20100136485-A1 ACETAL COMPOUNDS AND THEIR PREPARATION, POLYMERS, RESIST COMPOSITIONS AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-03 US disclosed
US-20100062374-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-11 US disclosed
US-7163781-B2 Process for producing a semiconductor device KABUSHIKI KAISHA TOSHIBA (JP) 2007-01-16 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (9 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110250539-A1 FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS H1-0, FRG1, H1-3 CYP19A1 3012/4885CYP17A1 2744/4885ALDH1A1 1697/4885
US-20110151381-A1 FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS AFF1, H1-0, FRG1 CYP19A1 2072/4885CYP17A1 2228/4885ALDH1A1 629/4885
US-20190235381-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS H1-2, H1-0, H1-4 CYP19A1 3073/4885CYP17A1 3251/4885ALDH1A1 3022/4885
US-20120077121-A1 FLUOROALCOHOL, FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS RER1, AFF1, RFT1 CYP19A1 920/4885CYP17A1 1044/4885ALDH1A1 229/4885
US-20130017484-A1 POLYMERIZABLE ESTER COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS RER1, DOT1L, H1-0 CYP19A1 1391/4885CYP17A1 1507/4885ALDH1A1 1319/4885
US-20100136485-A1 ACETAL COMPOUNDS AND THEIR PREPARATION, POLYMERS, RESIST COMPOSITIONS AND PATTERNING PROCESS C9, ARF1, C1R CYP19A1 2341/4885CYP17A1 3320/4885ALDH1A1 1502/4885
US-10591819-B2 Monomer, polymer, resist composition, and patterning process H1-2, H1-0, H1-4 CYP19A1 2908/4885CYP17A1 3255/4885ALDH1A1 2655/4885
US-20100062374-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS RER1, ARCN1, ASH2L CYP19A1 3988/4885CYP17A1 2167/4885ALDH1A1 2034/4885
US-20170226252-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS PARG, SMARCA1, SMARCA2 CYP19A1 3747/4885CYP17A1 3674/4885ALDH1A1 3957/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.