SCHEMBL786552

SCHEMBL786552

CCOC12CC3CC(C1)CC(C(=O)OCC(F)(F)S(=O)(=O)O)(C3)C2

nearest known ligand 0.39

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
NPSR1 Q6W5P4 3/20 0.39
MEN1 O00255 2/20 0.34
KMT2A Q03164 2/20 0.34
L3MBTL1 Q9Y468 2/20 0.34
LMNA P02545 2/20 0.34
ALDH1A1 P00352 3/20 0.33
TP53 P04637 1/20 0.32
GAA P10253 1/20 0.32
ABL1 P00519 1/20 0.31
TSHR P16473 1/20 0.31
RIN1 Q13671 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12727301 0.89 NPSR1 (0.39) NPSR1MEN1KMT2AL3MBTL1LMNA
SCHEMBL786286 0.88 NPSR1 (0.40) NPSR1MEN1KMT2AL3MBTL1LMNA
SCHEMBL26063484 0.87 NPSR1 (0.37) NPSR1MEN1KMT2AL3MBTL1LMNA
SCHEMBL18898568 0.86 NPSR1 (0.40) NPSR1MEN1KMT2AL3MBTL1LMNA
SCHEMBL18785335 0.86 NPSR1 (0.39) NPSR1MEN1KMT2AL3MBTL1LMNA
SCHEMBL686306 0.85 NPSR1 (0.42) NPSR1MEN1KMT2AL3MBTL1LMNA
SCHEMBL20886385 0.85 NPSR1 (0.38) NPSR1MEN1KMT2AL3MBTL1LMNA
SCHEMBL20886376 0.85 NPSR1 (0.38) NPSR1MEN1KMT2AL3MBTL1LMNA
SCHEMBL15250506 0.84 NPSR1 (0.34) NPSR1MEN1KMT2AL3MBTL1LMNA
SCHEMBL18785950 0.84 NPSR1 (0.38) NPSR1MEN1KMT2AL3MBTL1LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 63 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10766992-B2 Resin and resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2020-09-08 US disclosed
US-10377692-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2019-08-13 US disclosed
US-9726976-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-08-08 US disclosed
US-9268226-B2 Resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-02-23 US disclosed
US-9229320-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-01-05 US disclosed
US-9221785-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-12-29 US disclosed
US-20150301451-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-10-22 US disclosed
US-9063414-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-06-23 US disclosed
US-9051405-B2 Resin and resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-06-09 US disclosed
US-20150132698-A1 RESIN AND RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-05-14 US disclosed
US-20110033804-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-02-10 US disclosed
US-20110014567-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-01-20 US disclosed
US-20110014566-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-01-20 US disclosed
US-20100330497-A1 CHEMICALLY AMPLIFIED PHOTORESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-12-30 US disclosed
US-20100323296-A1 RESIN AND RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-12-23 US disclosed
US-20100316951-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-12-16 US disclosed
US-20100304296-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-12-02 US disclosed
US-20100304294-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-12-02 US disclosed
US-20100304292-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMMPANY, LIMITED (JP) 2010-12-02 US disclosed
US-20100203446-A1 CHEMICALLY AMPLIFIED PHOTORESIST COMPOSITION AND METHOD FOR FORMING PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-08-12 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100316951-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME THEM6, INTS6, CRY1 NPSR1 2030/4885MEN1 372/4885KMT2A 1038/4885
US-20100304296-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME C1S, H1-0, H1-2 NPSR1 1353/4885MEN1 238/4885KMT2A 1330/4885
US-20100304294-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME AFF1, F12, AP2A1 NPSR1 527/4885MEN1 381/4885KMT2A 687/4885
US-20110014567-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME XPA, XPOT, ERCC4 NPSR1 2009/4885MEN1 1450/4885KMT2A 2851/4885
US-20110014566-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME XPA, NPPA, ERCC4 NPSR1 2621/4885MEN1 888/4885KMT2A 369/4885
US-20100304292-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME CRY1, CHRM1, C1S NPSR1 1129/4885MEN1 215/4885KMT2A 2408/4885
US-10377692-B2 Photoresist composition C1R, C1S, F12 NPSR1 915/4885MEN1 2101/4885KMT2A 2298/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.