Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.32 |
| ▸ | PRKCA | P17252 | 6/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.32 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.32 |
| ▸ | CYP3A4 | P08684 | 3/20 | 0.30 |
| ▸ | USP2 | O75604 | 2/20 | 0.30 |
| ▸ | HMGCR | P04035 | 2/20 | 0.30 |
| ▸ | TSHR | P16473 | 2/20 | 0.30 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.30 |
| ▸ | NR1I2 | O75469 | 1/20 | 0.30 |
| ▸ | ABCB11 | O95342 | 1/20 | 0.30 |
| ▸ | NR3C1 | P04150 | 1/20 | 0.30 |
| ▸ | PGR | P06401 | 1/20 | 0.30 |
| ▸ | ABCB1 | P08183 | 1/20 | 0.30 |
| ▸ | ADORA3 | P0DMS8 | 1/20 | 0.30 |
| ▸ | CYP2C8 | P10632 | 1/20 | 0.30 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.30 |
| ▸ | ADRB3 | P13945 | 1/20 | 0.30 |
| ▸ | GABRA1 | P14867 | 1/20 | 0.30 |
| ▸ | ADRA2B | P18089 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL686256 | 0.83 | SMN1; SMN2 (0.35) | SMN1; SMN2PRKCAALDH1A1CYP3A4USP2 | |
| SCHEMBL13225195 | 0.77 | ALDH1A1 (0.40) | ALDH1A1L3MBTL1 | |
| SCHEMBL879226 | 0.75 | HMGCR (0.47) | SMN1; SMN2ALDH1A1CYP3A4USP2HMGCR | |
| SCHEMBL13343901 | 0.74 | ALDH1A1 (0.34) | ALDH1A1L3MBTL1 | |
| SCHEMBL12855336 | 0.72 | ALDH1A1 (0.31) | ALDH1A1L3MBTL1 | |
| SCHEMBL12705141 | 0.72 | SMN1; SMN2 (0.36) | SMN1; SMN2PRKCAALDH1A1CYP3A4HMGCR | |
| SCHEMBL687003 | 0.71 | CA1 (0.32) | ALDH1A1L3MBTL1 | |
| SCHEMBL686147 | 0.71 | ALDH1A1 (0.32) | ALDH1A1L3MBTL1 | |
| SCHEMBL12509319 | 0.70 | — | — | |
| SCHEMBL12963752 | 0.70 | ALDH1A1 (0.33) | ALDH1A1L3MBTL1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 101 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9268226-B2 | Resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-02-23 | — | — | US | disclosed |
| US-9260407-B2 | Salt and photoresist composition comprising the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-02-16 | — | — | US | disclosed |
| US-9229320-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-01-05 | — | — | US | disclosed |
| US-9221785-B2 | Salt and photoresist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-12-29 | — | — | US | disclosed |
| US-9063414-B2 | Photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-06-23 | — | — | US | disclosed |
| US-9051405-B2 | Resin and resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-06-09 | — | — | US | disclosed |
| US-20150132698-A1 | RESIN AND RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-05-14 | — | — | US | disclosed |
| US-8993210-B2 | Salt and photoresist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-03-31 | — | — | US | disclosed |
| US-8921029-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2014-12-30 | — | — | US | disclosed |
| US-8916330-B2 | Chemically amplified photoresist composition and method for forming resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2014-12-23 | — | — | US | disclosed |
| US-7575850-B2 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-08-18 | — | — | US | disclosed |
| US-7572570-B2 | Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-08-11 | — | — | US | disclosed |
| US-7566522-B2 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-07-28 | — | — | US | disclosed |
| US-20080274426-A1 | Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-11-06 | — | — | US | disclosed |
| US-20080248423-A1 | Lithography; semiconductor microfabrication | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080213695-A1 | Lithography; semiconductor microfabrication | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-09-04 | — | — | US | disclosed |
| US-20080193874-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-08-14 | — | — | US | disclosed |
| US-20080166660-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-07-10 | — | — | US | disclosed |
| US-20080081293-A1 | Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-04-03 | — | — | US | disclosed |
| US-20070078269-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-04-05 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20080081293-A1 | Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same | HCN3, HCN1, NHERF1 | SMN1; SMN2 3865/4885PRKCA 1712/4885ALDH1A1 1930/4885 |
| US-20070078269-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | HCN4, HCN3, HCN1 | SMN1; SMN2 4515/4885PRKCA 1942/4885ALDH1A1 1296/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.