Predicted protein targets (top 4)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 3/20 | 0.41 |
| ▸ | HTT | P42858 | 1/20 | 0.39 |
| ▸ | THRB | P10828 | 1/20 | 0.39 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.37 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL20103091 | 0.98 | TSHR (0.40) | TSHRHTTTHRBALDH1A1 | |
| SCHEMBL2601742 | 0.87 | TSHR (0.40) | TSHRTHRBALDH1A1 | |
| SCHEMBL2607869 | 0.86 | TSHR (0.37) | TSHRTHRBALDH1A1 | |
| SCHEMBL28031899 | 0.86 | TSHR (0.48) | TSHRHTTTHRBALDH1A1 | |
| SCHEMBL36595 | 0.86 | TSHR (0.48) | TSHRHTTTHRBALDH1A1 | |
| SCHEMBL13427469 | 0.86 | TSHR (0.39) | TSHRTHRBALDH1A1 | |
| SCHEMBL2610391 | 0.86 | TSHR (0.39) | TSHRTHRBALDH1A1 | |
| SCHEMBL10175873 | 0.85 | HTT (0.39) | HTT | |
| SCHEMBL12427755 | 0.84 | TSHR (0.38) | TSHRTHRBALDH1A1 | |
| SCHEMBL22662270 | 0.84 | TSHR (0.38) | TSHRTHRBALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 329 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12032290-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2024-07-09 | — | — | US | disclosed |
| US-12032290-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2024-07-09 | — | — | US | disclosed |
| US-12032288-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2024-07-09 | — | — | US | disclosed |
| US-12032288-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2024-07-09 | — | — | US | disclosed |
| US-20230400769-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230400769-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230400765-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND ONIUM SALT COMPOUND | JSR CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230400765-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND ONIUM SALT COMPOUND | JSR CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| US-11835849-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-12-05 | — | — | US | disclosed |
| US-11835849-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-12-05 | — | — | US | disclosed |
| US-20100143844-A1 | Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing resin | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-06-10 | — | — | US | disclosed |
| US-20100081086-A1 | POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-04-01 | — | — | US | disclosed |
| US-20100081086-A1 | POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-04-01 | — | — | US | disclosed |
| US-20100047724-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-02-25 | — | — | US | disclosed |
| US-20100047724-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-02-25 | — | — | US | disclosed |
| US-20090317743-A1 | Resist composition for immersion exposure, method of forming resist pattern, and flourine-containing polymeric compound | TOKYO OHKA KOGYO CO., LTD. | 2009-12-24 | — | — | US | disclosed |
| US-20090317743-A1 | Resist composition for immersion exposure, method of forming resist pattern, and flourine-containing polymeric compound | TOKYO OHKA KOGYO CO., LTD. | 2009-12-24 | — | — | US | disclosed |
| EP-2088466-A1 | Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound | Tokyo Ohka Kogyo Co., Ltd. (JP) | 2009-08-12 | — | — | EP | disclosed |
| US-20090197204-A1 | RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-08-06 | — | — | US | disclosed |
| US-20090197204-A1 | RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-08-06 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11835849-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | RER1, TERB1, TRRAP | TSHR 1473/4885HTT 1628/4885THRB 3506/4885 |
| US-20230400765-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND ONIUM SALT COMPOUND | RFT1, RER1, AFF1 | TSHR 1315/4885HTT 2041/4885THRB 3176/4885 |
| US-20090197204-A1 | RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING COMPOUND | RER1, FRG1, AFF1 | TSHR 2238/4885HTT 4820/4885THRB 2484/4885 |
| US-12032288-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | RER1, COL1A1, RAD51 | TSHR 3144/4885HTT 3977/4885THRB 2913/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.