SCHEMBL8023308

SCHEMBL8023308

CCCCCCC(c1ccccc1)C(OB(O)O)(c1ccccc1)c1ccccc1

nearest known ligand 0.39

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 5/20 0.39
KMT2A Q03164 5/20 0.39
ATM Q13315 1/20 0.37
MMP2 P08253 4/20 0.37
MMP3 P08254 2/20 0.37
CSNK1E P49674 1/20 0.36
ALDH1A1 P00352 1/20 0.36
OPRM1 P35372 1/20 0.36
OPRD1 P41143 1/20 0.36
OPRK1 P41145 1/20 0.36
OPRL1 P41146 1/20 0.36
NAAA Q02083 2/20 0.35
PRSS1 P07477 1/20 0.35
CTSG P08311 1/20 0.35
CTRB1 P17538 1/20 0.35
CMA1 P23946 1/20 0.35
MMP9 P14780 2/20 0.35
MMP1 P03956 1/20 0.35
MMP14 P50281 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8016478 0.99 MEN1 (0.38) MEN1KMT2AATMMMP2MMP3
SCHEMBL810138 0.94 CTSK (0.38) MEN1KMT2AATMALDH1A1
Tetrabuthylammonium SCHEMBL19096924 0.90 CTSK (0.36) MEN1KMT2AATMMMP2MMP3
SCHEMBL8023300 0.89 MEN1 (0.38) MEN1KMT2AATMMMP2MMP3
SCHEMBL8016468 0.87 MEN1 (0.37) MEN1KMT2AATMMMP2MMP3
SCHEMBL8516931 0.84 MEN1 (0.40) MEN1KMT2AATMMMP2MMP3
SCHEMBL8018671 0.84 MMP9 (0.39) MEN1KMT2AMMP2MMP3ALDH1A1
Tetrabuthylammonium SCHEMBL4807012 0.83 MEN1 (0.35) MEN1KMT2AATMMMP2MMP3
SCHEMBL7666676 0.83 CTSK (0.37) MEN1KMT2AATMALDH1A1
SCHEMBL532851 0.83 LMNA (0.39) MEN1KMT2AALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-113166415-A Material for forming film for lithography, composition for forming film for lithography, underlayer film for lithography, and pattern formation method 三菱瓦斯化学株式会社 2021-07-23 CN disclosed
CN-113039177-A Material for forming film for lithography, composition for forming film for lithography, underlayer film for lithography, and pattern formation method 三菱瓦斯化学株式会社 2021-06-25 CN disclosed
CN-112996839-A Material for forming film for lithography, composition for forming film for lithography, underlayer film for lithography, and pattern formation method 三菱瓦斯化学株式会社 2021-06-18 CN disclosed
US-6096794-A PHOTOINITIATOR SYSTEM FOR PHOTOPOLYMERIZATION OF ETHYLENICALLY UNSATURATED POLYMERIZABLE COMPOUNDS CIBA SPECIALTY CHEMICALS CORPORATION (US) 2000-08-01 US disclosed
US-6090865-A PHOTOINITIATOR SYSTEM COMPRISING (A) AT LEAST ONE O-ALKYLATED AROMATIC NITROGEN-HETEROCYCLE AMINE OXIDE CATION SALT AND (B) AT LEAST ONE ELECTRON DONOR COMPOUND. CIBA SPECIALTY CHEMICALS CORPORATION (US) 2000-07-18 US disclosed
EP-0896587-A1 POLYMERISABLE COMPOSITION Ciba SC Holding AG (CH) 1999-02-17 EP disclosed
WO-1997042227-A1 POLYMERISABLE COMPOSITION CIBA SPECIALTY CHEMICALS HOLDING INC. (CH) 1997-11-13 WO disclosed