Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HTT | P42858 | 1/20 | 0.41 |
| ▸ | LMNA | P02545 | 2/20 | 0.37 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.37 |
| ▸ | TSHR | P16473 | 2/20 | 0.35 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.35 |
| ▸ | NFKB1 | P19838 | 1/20 | 0.35 |
| ▸ | ADRA1A | P35348 | 1/20 | 0.35 |
| ▸ | RAB9A | P51151 | 1/20 | 0.35 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.35 |
| ▸ | CA1 | P00915 | 1/20 | 0.30 |
| ▸ | CA2 | P00918 | 1/20 | 0.30 |
| ▸ | PLA2G2C | Q5R387 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12321027 | 0.86 | HTT (0.44) | HTT | |
| SCHEMBL807033 | 0.84 | LMNA (0.33) | LMNAHSD17B10TSHRCYP3A4NFKB1 | |
| SCHEMBL10226723 | 0.81 | HTT (0.42) | HTT | |
| SCHEMBL10228187 | 0.81 | HTT (0.42) | HTT | |
| SCHEMBL14950972 | 0.79 | LMNA (0.33) | LMNAHSD17B10TSHRCYP3A4NFKB1 | |
| SCHEMBL19497591 | 0.78 | HTT (0.40) | HTTHSD17B10TSHR | |
| SCHEMBL25785553 | 0.77 | ALDH1A1 (0.44) | LMNAHSD17B10TSHRRAB9ATDP1 | |
| SCHEMBL18408859 | 0.76 | HTT (0.41) | HTT | |
| SCHEMBL879534 | 0.76 | CA1 (0.30) | LMNAHSD17B10CA1CA2 | |
| SCHEMBL21436393 | 0.76 | DGAT1 (0.43) | LMNAHSD17B10TSHRCYP3A4NFKB1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2013047092-A1 | PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2013-04-04 | — | — | WO | disclosed |
| WO-2013047396-A1 | PATTERN FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET-SENSITIVE COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2013-04-04 | — | — | WO | disclosed |
| WO-2012036315-A1 | METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2012-03-22 | — | — | WO | disclosed |
| WO-2011162408-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2011-12-29 | — | — | WO | disclosed |
| WO-2011118855-A1 | PATTERN FORMING METHOD AND RESIST COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-09-29 | — | — | WO | disclosed |
| WO-2011118853-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-09-29 | — | — | WO | disclosed |
| WO-2010147228-A1 | PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2010-12-23 | — | — | WO | disclosed |