Predicted protein targets (top 5)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP19A1 | P11511 | 1/20 | 0.41 |
| ▸ | CHRM2 | P08172 | 1/20 | 0.30 |
| ▸ | CHRM4 | P08173 | 1/20 | 0.30 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.30 |
| ▸ | CHRM3 | P20309 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL824352 | 0.98 | CYP19A1 (0.39) | CYP19A1 | |
| SCHEMBL13779608 | 0.95 | CYP19A1 (0.38) | CYP19A1 | |
| SCHEMBL824236 | 0.87 | CYP19A1 (0.37) | CYP19A1CHRM2CHRM4CHRM1CHRM3 | |
| SCHEMBL10226379 | 0.85 | CYP19A1 (0.44) | CYP19A1 | |
| SCHEMBL13483413 | 0.85 | CYP19A1 (0.40) | CYP19A1CHRM2CHRM4CHRM1CHRM3 | |
| SCHEMBL110528 | 0.85 | CYP19A1 (0.40) | CYP19A1CHRM2CHRM4CHRM1CHRM3 | |
| SCHEMBL824220 | 0.85 | CYP19A1 (0.40) | CYP19A1CHRM2CHRM4CHRM1CHRM3 | |
| SCHEMBL13137679 | 0.85 | CYP19A1 (0.40) | CYP19A1CHRM2CHRM4CHRM1CHRM3 | |
| SCHEMBL824266 | 0.85 | CYP19A1 (0.40) | CYP19A1CHRM2CHRM4CHRM1CHRM3 | |
| SCHEMBL10192989 | 0.83 | CYP19A1 (0.42) | CYP19A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 79 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9740100-B2 | Hemiacetal compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-08-22 | — | — | US | disclosed |
| US-9740100-B2 | Hemiacetal compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-08-22 | — | — | US | disclosed |
| US-20160238930-A1 | HEMIACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-08-18 | — | — | US | disclosed |
| US-20160238930-A1 | HEMIACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-08-18 | — | — | US | disclosed |
| US-9256127-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-02-09 | — | — | US | disclosed |
| US-9235122-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-01-12 | — | — | US | disclosed |
| US-9235122-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-01-12 | — | — | US | disclosed |
| US-20150323865-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-11-12 | — | — | US | disclosed |
| US-9046772-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-06-02 | — | — | US | disclosed |
| US-9040220-B2 | Compound and method of producing the same, acid generator, resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-05-26 | — | — | US | disclosed |
| US-20090181325-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-07-16 | — | — | US | disclosed |
| US-20090162788-A1 | NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-06-25 | — | — | US | disclosed |
| US-20090162787-A1 | NOVEL COMPOUND, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-06-25 | — | — | US | disclosed |
| US-20090142699-A1 | FLUORINE-CONTAINING COMPOUND, RESIST COMPOSITION FOR IMMERSION EXPOSURE, AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-06-04 | — | — | US | disclosed |
| US-20090130597-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-05-21 | — | — | US | disclosed |
| US-20090104563-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-04-23 | — | — | US | disclosed |
| US-20090098484-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-04-16 | — | — | US | disclosed |
| US-20090068591-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-03-12 | — | — | US | disclosed |
| US-20090068590-A1 | POLYMER COMPOUND, POSITIVE RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-03-12 | — | — | US | disclosed |
| US-20090023097-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-01-22 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20090162787-A1 | NOVEL COMPOUND, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | RER1, ASIC1, ABCC1 | CYP19A1 115/4885CHRM2 124/4885CHRM4 1027/4885 |
| US-20160238930-A1 | HEMIACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | H1-3, H1-0, H1-2 | CYP19A1 2439/4885CHRM2 109/4885CHRM4 358/4885 |
| US-20090068591-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, AND ACID GENERATOR | RER1, C1R, ABCC1 | CYP19A1 84/4885CHRM2 162/4885CHRM4 505/4885 |
| US-20090104563-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | RER1, ABCC1, GLRA1 | CYP19A1 33/4885CHRM2 317/4885CHRM4 1289/4885 |
| US-20090130597-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | RER1, ASIC1, ABCC1 | CYP19A1 71/4885CHRM2 103/4885CHRM4 802/4885 |
| US-20090162788-A1 | NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | RER1, ASIC1, GLRA1 | CYP19A1 113/4885CHRM2 41/4885CHRM4 422/4885 |
| US-20150323865-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | H1-0, H1-3, H1-2 | CYP19A1 3203/4885CHRM2 188/4885CHRM4 460/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.