SCHEMBL824236

SCHEMBL824236

CCC(C)C(=O)OCCOCC(=O)OC1(C)CCCCC1

nearest known ligand 0.37

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
CYP19A1 P11511 1/20 0.37
CHRM2 P08172 1/20 0.32
CHRM4 P08173 1/20 0.32
CHRM1 P11229 1/20 0.32
CHRM3 P20309 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL853982 0.87 CYP19A1 (0.40) CYP19A1CHRM2CHRM4CHRM1CHRM3
SCHEMBL824235 0.87 CYP19A1 (0.41) CYP19A1CHRM2CHRM4CHRM1CHRM3
SCHEMBL824352 0.86 CYP19A1 (0.39) CYP19A1
SCHEMBL824373 0.85 CHRM2 (0.31) CHRM2CHRM1
SCHEMBL824266 0.85 CYP19A1 (0.40) CYP19A1CHRM2CHRM4CHRM1CHRM3
SCHEMBL824363 0.83 CYP19A1 (0.38) CYP19A1
SCHEMBL853995 0.83 CYP19A1 (0.40) CYP19A1CHRM2CHRM1
SCHEMBL13779608 0.83 CYP19A1 (0.38) CYP19A1
SCHEMBL13137679 0.79 CYP19A1 (0.40) CYP19A1CHRM2CHRM4CHRM1CHRM3
SCHEMBL824220 0.79 CYP19A1 (0.40) CYP19A1CHRM2CHRM4CHRM1CHRM3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20140127626-A1 RESIST COMPOSITION FOR NEGATIVE DEVELOPMENT WHICH IS USED FOR FORMATION OF GUIDE PATTERN, GUIDE PATTERN FORMATION METHOD, AND METHOD FOR FORMING PATTERN ON LAYER CONTAINING BLOCK COPOLYMER RIKEN (JP) 2014-05-08 US disclosed
US-8518629-B2 Resist composition for immersion exposure and method of forming resist pattern using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2013-08-27 US disclosed
US-8475997-B2 Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2013-07-02 US disclosed
US-8338075-B2 Base component which exhibits increased solubility in an alkali developing solution under the action of acid, an acid generator, and organic solvent having a boiling point of at least 150 degrees C.; hole-like resist pattern can be formed with a high level of resolution and minute dimensions TOKYO OHKA KOGYO CO., LTD. (JP) 2012-12-25 US disclosed
US-8324331-B2 Fluorine-containing compound and polymeric compound DAITO CHEMIX CORPORATION (JP) 2012-12-04 US disclosed
US-8247160-B2 Resist composition, method of forming resist pattern, and novel compound and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2012-08-21 US disclosed
US-8221956-B2 Resist composition for immersion exposure, method of forming resist pattern, and flourine-containing polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2012-07-17 US disclosed
US-20120094236-A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING POLYMERIC COMPOUND SHIONO DAIJU (JP) 2012-04-19 US disclosed
US-8142979-B2 Resist composition for immersion exposure and method of forming resist pattern using the same Tokyo Ohka Tokyo Co., Ltd. (JP) 2012-03-27 US disclosed
US-8029972-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2011-10-04 US disclosed
US-8012669-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2011-09-06 US disclosed
US-20100168358-A1 FLUORINE-CONTAINING COMPOUND AND POLYMERIC COMPOUND DAITO CHEMIX CORPORATION (JP) 2010-07-01 US disclosed
US-20100047724-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2010-02-25 US disclosed
US-20100015555-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND NOVEL COMPOUND AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2010-01-21 US disclosed
US-20090317743-A1 Resist composition for immersion exposure, method of forming resist pattern, and flourine-containing polymeric compound TOKYO OHKA KOGYO CO., LTD. 2009-12-24 US disclosed
US-20090311627-A1 Resist composition for immersion exposure and method of forming resist pattern using the same TOKYO OHKA KOGYO CO., LTD. 2009-12-17 US disclosed
US-20090226842-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-09-10 US disclosed
US-20090098484-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-04-16 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100015555-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND NOVEL COMPOUND AND ACID GENERATOR RER1, SLC11A2, FRG1 CYP19A1 168/4885CHRM2 291/4885CHRM4 2169/4885
US-20100168358-A1 FLUORINE-CONTAINING COMPOUND AND POLYMERIC COMPOUND AFF1, AFF2, FLI1 CYP19A1 505/4885CHRM2 2769/4885CHRM4 2598/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.