SCHEMBL825397

SCHEMBL825397

CCC(C)c1ccc(OC2CCCCO2)cc1

nearest known ligand 0.48

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 6/20 0.43
POLB P06746 1/20 0.40
TSHR P16473 1/20 0.39
KMT2A Q03164 2/20 0.39
MEN1 O00255 1/20 0.37
NPSR1 Q6W5P4 1/20 0.37
SMN1; SMN2 Q16637 1/20 0.37
DHFR P00374 1/20 0.36
GAA P10253 1/20 0.36
MAPT P10636 1/20 0.36
TNK2 Q07912 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14049220 1.00 ALDH1A1 (0.43) ALDH1A1POLBTSHRKMT2AMEN1
SCHEMBL16745538 0.96 ALDH1A1 (0.45) ALDH1A1POLBTSHRKMT2AMEN1
SCHEMBL11772440 0.87 ABCB11 (0.39) ALDH1A1KMT2AMEN1DHFRTNK2
SCHEMBL7231881 0.85 KMT2A (0.40) KMT2AMEN1NPSR1DHFRTNK2
SCHEMBL7774785 0.85 KMT2A (0.40) KMT2AMEN1NPSR1DHFRTNK2
SCHEMBL23676925 0.84 DHFR (0.38) ALDH1A1KMT2AMEN1DHFRTNK2
SCHEMBL13350364 0.84 MEN1 (0.36) ALDH1A1KMT2AMEN1DHFRTNK2
SCHEMBL8028966 0.84 HSD11B1 (0.37) ALDH1A1KMT2AMEN1DHFRTNK2
SCHEMBL10183535 0.84 DHFR (0.45) ALDH1A1POLBDHFR
SCHEMBL12578583 0.83 ESR1 (0.35) ALDH1A1POLBKMT2AMEN1DHFR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 215 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11693321-B2 Treatment liquid for manufacturing semiconductor, storage container storing treatment liquid for manufacturing semiconductor, pattern forming method, and method of manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-07-04 US disclosed
US-20230135117-A1 SOLUTION, SOLUTION STORAGE BODY, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2023-05-04 US disclosed
US-11640113-B2 Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method, and method of manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-05-02 US disclosed
US-10928727-B2 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blank including actinic ray-sensitive or radiation-sensitive film, pattern forming method, and method for manufacturing FUJIFILM CORPORATION (JP) 2021-02-23 US disclosed
US-10423068-B2 Active-light-sensitive or radiation-sensitive resin composition, active-light-sensitive or radiation-sensitive film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2019-09-24 US disclosed
US-20180210339-A1 RESIST COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE, EACH USING RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2018-07-26 US disclosed
US-20180120701-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK INCLUDING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2018-05-03 US disclosed
US-20180120708-A1 RINSING LIQUID, PATTERN FORMING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD FUJIFILM CORPORATION (JP) 2018-05-03 US disclosed
US-20180120701-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK INCLUDING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2018-05-03 US disclosed
US-9958775-B2 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blanks including actinic ray-sensitive or radiation-sensitive film, pattern forming method and photomask FUJIFILM CORPORATION (JP) 2018-05-01 US disclosed
EP-1835341-A1 Positive resist composition and pattern forming method using the same FUJIFILM Corporation (JP) 2007-09-19 EP disclosed
EP-1835342-A2 Positive resist composition and pattern forming method using the same FUJIFILM Corporation (JP) 2007-09-19 EP disclosed
US-7255971-B2 Positive resist composition FUJIFILM CORPORATION (JP) 2007-08-14 US disclosed
US-7235341-B2 Positive resist composition FUJIFILM CORPORATION (JP) 2007-06-26 US disclosed
US-7214467-B2 Photosensitive resin composition FUJIFILM CORPORATION (JP) 2007-05-08 US disclosed
US-7202015-B2 Positive photoresist composition and pattern making method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-04-10 US disclosed
US-7202014-B2 Stimulus-sensitive composition, compound and pattern formation method using the stimulation-sensitive composition FUJIFILM CORPORATION (JP) 2007-04-10 US disclosed
US-20070072121-A1 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-29 US disclosed
US-20070072121-A1 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-29 US disclosed
US-7189492-B2 Photosensitive composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-03-13 US disclosed