SCHEMBL825495

SCHEMBL825495

CCC(C)C(=O)Nc1ccccc1OC(=O)c1c(C)cccc1C

nearest known ligand 0.62

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
▸ KDM4E B2RXH2 3/20 0.62
▸ KMT2A Q03164 3/20 0.62
▸ L3MBTL1 Q9Y468 1/20 0.62
▸ ALDH1A1 P00352 4/20 0.43
▸ LMNA P02545 3/20 0.43
▸ PGR P06401 1/20 0.43
▸ SCN1A P35498 1/20 0.43
▸ SCN2A Q99250 1/20 0.43
▸ SCN3A Q9NY46 1/20 0.43
▸ TSHR P16473 1/20 0.43
▸ GAA P10253 2/20 0.42
▸ MAPT P10636 2/20 0.42
▸ HPGD P15428 2/20 0.42
▸ HSD17B10 Q99714 1/20 0.41
▸ PKM P14618 1/20 0.41
▸ MEN1 O00255 2/20 0.41
▸ POLB P06746 1/20 0.40
▸ HTT P42858 1/20 0.40
▸ TRPM4 Q8TD43 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL825597 0.83 KMT2A (0.67) KDM4EKMT2AL3MBTL1ALDH1A1LMNA
SCHEMBL12125170 0.79 KDM4E (0.63) KDM4EKMT2AL3MBTL1ALDH1A1LMNA
SCHEMBL12125175 0.78 KMT2A (0.76) KDM4EKMT2AL3MBTL1ALDH1A1TSHR
SCHEMBL31351354 0.77 KMT2A (1.00) KDM4EKMT2AL3MBTL1ALDH1A1LMNA
SCHEMBL10027966 0.76 KDM4E (0.64) KDM4EKMT2AL3MBTL1ALDH1A1LMNA
SCHEMBL10027969 0.75 KDM4E (0.70) KDM4EKMT2AL3MBTL1ALDH1A1LMNA
SCHEMBL10027968 0.74 KMT2A (0.77) KDM4EKMT2AL3MBTL1ALDH1A1LMNA
SCHEMBL10027955 0.73 KMT2A (0.80) KDM4EKMT2AL3MBTL1ALDH1A1LMNA
SCHEMBL10027960 0.73 KDM4E (0.71) KDM4EKMT2AL3MBTL1ALDH1A1LMNA
SCHEMBL14275079 0.72 ATM (0.54) KDM4EKMT2AL3MBTL1ALDH1A1LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8142977-B2 mixture of resin which decomposes under acid under exposure to actinic radiation, acid generator FUJIFILM CORPORATION (JP) 2012-03-27 — — US disclosed
US-20080241749-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 — — US disclosed
Send feedback