SCHEMBL825538

SCHEMBL825538

CCC(C)C(=O)Oc1ccc(-c2ccccc2)cc1

nearest known ligand 0.56

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 3/20 0.56
CYP1A2 P05177 1/20 0.51
GAA P10253 1/20 0.51
CYP2C9 P11712 1/20 0.51
PKM P14618 1/20 0.51
CYP2C19 P33261 1/20 0.51
ELANE P08246 1/20 0.49
SMN1; SMN2 Q16637 3/20 0.46
NPC1 O15118 2/20 0.45
RAB9A P51151 2/20 0.45
FFAR1 O14842 1/20 0.44
MEN1 O00255 1/20 0.44
KMT2A Q03164 1/20 0.44
MME P08473 2/20 0.44
ACE P12821 2/20 0.44
CPA1 P15085 2/20 0.44
ACE2 Q9BYF1 2/20 0.44
PDCD1 Q15116 1/20 0.44
CD274 Q9NZQ7 1/20 0.44
PTGS2 P35354 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10000787 0.93 ELANE (0.47) MAPTCYP1A2GAACYP2C9PKM
SCHEMBL650639 0.90 ELANE (0.50) MAPTCYP1A2GAAELANENPC1
SCHEMBL14996055 0.90 ELANE (0.50) MAPTCYP1A2GAAELANENPC1
SCHEMBL17617137 0.90 ELANE (0.50) MAPTCYP1A2GAAELANENPC1
SCHEMBL14169489 0.88 MAPT (0.46) MAPTCYP1A2GAACYP2C9PKM
SCHEMBL14827291 0.87 NPY5R (0.50) CYP2C9CYP2C19ELANENPC1RAB9A
SCHEMBL10422503 0.87 HSD17B10 (0.53) MAPTGAAPKMELANESMN1; SMN2
SCHEMBL9488299 0.87 ESR2 (0.44) MAPTCYP1A2CYP2C19ELANESMN1; SMN2
SCHEMBL15965768 0.87 LMNA (0.47) MAPTGAAELANEMEN1KMT2A
SCHEMBL14275400 0.87 KMT2A (0.53) MAPTNPC1RAB9AMEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 63 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11644714-B2 Polarizer, method of producing polarizer, laminate, and image display device FUJIFILM CORPORATION (JP) 2023-05-09 US disclosed
US-10031419-B2 Pattern forming method, composition kit and resist film, manufacturing method of electronic device using these, and electronic device FUJIFILM CORPORATION (JP) 2018-07-24 US disclosed
US-9915870-B2 Pattern forming method, composition kit and resist film, and method for producing electronic device using them, and electronic device FUJIFILM CORPORATION (JP) 2018-03-13 US disclosed
US-9904168-B2 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blank provided with actinic ray-sensitive or radiation-sensitive film, pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2018-02-27 US disclosed
US-9651863-B2 Pattern forming method, active light sensitive or radiation sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2017-05-16 US disclosed
US-9632410-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, resist-coated mask blank, photomask and pattern forming method, and method for producing electronic device using them, and electronic device FUJIFILM CORPORATION (JP) 2017-04-25 US disclosed
US-9557643-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device using the same and electronic device FUJIFILM CORPORATION (JP) 2017-01-31 US disclosed
US-9551933-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, using the same, pattern forming method, manufacturing method of electronic device, and electronic device FUJIFILM CORPORATION (JP) 2017-01-24 US disclosed
US-9527809-B2 Compound, actinic ray-sensitive or radiation-sensitive resin composition, resist film, and pattern formation method, and method for manufacturing electronic device using same, and electronic device FUJIFILM CORPORATION (JP) 2016-12-27 US disclosed
US-9513547-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-12-06 US disclosed
US-20120178871-A1 THERMALLY CURED UNDERLAYER FOR LITHOGRAPHIC APPLICATION DE BINOD B (US) 2012-07-12 US disclosed
US-8153346-B2 Hydroxyl containing polymer, amino crosslinking agent and thermal acid generator; undercoating for multilayer lithography material FUJIFILM ELECTRONIC MATERIALS, U.S.A., INC. (US) 2012-04-10 US disclosed
US-20120082939-A1 ACTIVE LIGHT RAY SENSITIVE OR RADIOACTIVE RAY SENSITIVE RESIN COMPOSITION, AND ACTIVE LIGHT RAY SENSITIVE OR RADIOACTIVE RAY SENSITIVE FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2012-04-05 US disclosed
US-8142977-B2 mixture of resin which decomposes under acid under exposure to actinic radiation, acid generator FUJIFILM CORPORATION (JP) 2012-03-27 US disclosed
CN-101466694-B Aryl-and heteroaryl-ethyl-acylguanidine derivatives, their preparation and their use in therapeutics SANOFI AVENTIS 2012-03-21 CN disclosed
US-20120003586-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2012-01-05 US disclosed
CN-101466694-A Aryl-and heteroaryl-ethyl-acylguanidine derivatives, their preparation and their use in therapeutics SANOFI AVENTIS (FR) 2009-06-24 CN disclosed
US-20080241749-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed
US-20080206676-A1 THERMALLY CURED UNDERLAYER FOR LITHOGRAPHIC APPLICATION FUJIFILM ELECTRONIC MATERIALS, U.S.A, INC 2008-08-28 US disclosed
CN-1711239-A Novel biaromatic compounds which activate PPARy type receptors and cosmetic/pharmaceutical compositions comprised thereof GALDERMA RES & DEV (FR) 2005-12-21 CN disclosed