Predicted protein targets (top 13)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TDP1 | Q9NUW8 | 4/20 | 0.61 |
| ▸ | GPR35 | Q9HC97 | 2/20 | 0.58 |
| ▸ | TSHR | P16473 | 5/20 | 0.52 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.52 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.52 |
| ▸ | S100A4 | P26447 | 2/20 | 0.50 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.50 |
| ▸ | MEN1 | O00255 | 1/20 | 0.46 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.46 |
| ▸ | PDE10A | Q9Y233 | 1/20 | 0.45 |
| ▸ | PTPRC | P08575 | 1/20 | 0.45 |
| ▸ | ERN1 | O75460 | 1/20 | 0.45 |
| ▸ | LMNA | P02545 | 1/20 | 0.44 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL11166158 | 0.84 | TSHR (0.64) | TDP1GPR35TSHRALDH1A1SMN1; SMN2 | |
| SCHEMBL3045544 | 0.84 | GPR35 (0.62) | TDP1GPR35TSHRALDH1A1SMN1; SMN2 | |
| SCHEMBL2924859 | 0.84 | TDP1 (0.50) | TDP1GPR35TSHRALDH1A1SMN1; SMN2 | |
| SCHEMBL3293758 | 0.84 | TDP1 (0.50) | TDP1GPR35TSHRALDH1A1SMN1; SMN2 | |
| SCHEMBL2729042 | 0.84 | TDP1 (0.50) | TDP1GPR35TSHRALDH1A1SMN1; SMN2 | |
| SCHEMBL6740779 | 0.84 | TDP1 (0.50) | TDP1GPR35TSHRALDH1A1SMN1; SMN2 | |
| SCHEMBL5950670 | 0.81 | ALDH1A1 (0.50) | TDP1GPR35TSHRALDH1A1SMN1; SMN2 | |
| Methane SCHEMBL27947126 | 0.80 | HSD17B10 (0.64) | TDP1GPR35TSHRALDH1A1SMN1; SMN2 | |
| SCHEMBL8483109 | 0.80 | TSHR (0.64) | TDP1GPR35TSHRALDH1A1MEN1 | |
| SCHEMBL8482144 | 0.80 | ALDH1A1 (0.52) | TDP1GPR35TSHRALDH1A1SMN1; SMN2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 413 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2023049774-A1 | GENETICALLY ENCODED AND EXOGENOUSLY TRIGGERED PROTEIN-PROTEIN LIGATION | UNIVERSITY OF WASHINGTON (US) | 2023-03-30 | — | — | WO | claimed |
| CN-105001108-B | The preparation method of the dimethyl glutamate derivatives of optical voidness 3,4 | 河北科技大学 | 2017-10-13 | — | — | CN | claimed |
| CN-102782580-B | Pattern forming method | NIPPON KOGAKU KK | 2015-04-22 | — | — | CN | claimed |
| US-8828749-B2 | Methodology for evaluation of electrical characteristics of carbon nanotubes | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2014-09-09 | — | — | US | claimed |
| US-8475667-B2 | Method of patterning photosensitive material on a substrate containing a latent acid generator | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2013-07-02 | — | — | US | claimed |
| US-8449781-B2 | Selective etch back process for carbon nanotubes intergration | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2013-05-28 | — | — | US | claimed |
| US-20120301980-A1 | METHODOLOGY FOR EVALUATION OF ELECTRICAL CHARACTERISTICS OF CARBON NANOTUBES | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2012-11-29 | — | — | US | claimed |
| US-20110309507-A1 | METHODOLOGY FOR EVALUATION OF ELECTRICAL CHARACTERISTICS OF CARBON NANOTUBES | INTERNATIONAL BUSINESS MACHINES CORP. (US) | 2011-12-22 | — | — | US | claimed |
| US-7425502-B2 | Minimizing resist poisoning in the manufacture of semiconductor devices | TEXAS INSTRUMENTS INCORPORATED (US) | 2008-09-16 | — | — | US | claimed |
| US-20080020580-A1 | Minimizing resist poisoning in the manufacture of semiconductor devices | TEXAS INSTRUMENTS INCORPORATED (US) | 2008-01-24 | — | — | US | claimed |
| US-20020155379-A1 | Photosensitive monomer, photosensitive polymer and chemically amplified resist composition comprising lactone group having acid-labile protecting group | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2002-10-24 | — | — | US | claimed |
| US-20020146642-A1 | Photosensitive polymers and resist compositions comprising the photosensitive polymers | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2002-10-10 | — | — | US | claimed |
| US-20020042016-A1 | Resist composition comprising photosensitive polymer having loctone in its backbone | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2002-04-11 | — | — | US | claimed |
| US-6300036-B1 | COPOLYMER OF MALEIC ANHYDRIDE AND 2-NORBORNENE-5-METHANOL DERIVATIVE; ACCURATE PATTERNS WHEN EXPOSED TO ARGON FLUORIDE LASERS; DRY ETCHING RESISTANCE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2001-10-09 | — | — | US | claimed |
| US-20010024763-A1 | Photosensitive polymer including copolymer of alkyl vinyl ether and resist composition containing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2001-09-27 | — | — | US | claimed |
| US-6287747-B1 | CONTAINING ORGANOOXYGEN COMPOUNDS AND UNSATURATED COMPOUNDS | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2001-09-11 | — | — | US | claimed |
| US-6143465-A | Photosensitive polymer having cyclic backbone and resist composition comprising same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2000-11-07 | — | — | US | claimed |
| US-6080524-A | Photosensitive polymer having cyclic backbone and resist composition comprising the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2000-06-27 | — | — | US | claimed |
| EP-0921439-A1 | Photosensitive polymer and chemically amplified resist composition using the same | Samsung Electronics Co., Ltd. (KR) | 1999-06-09 | — | — | EP | claimed |
| EP-0679951-B1 | Positive resist composition | TOKYO OHKA KOGYO CO LTD (JP) | 1997-01-15 | — | — | EP | claimed |