Water

Water

SCHEMBL8394148

CC[P+](C)(C)C.[OH-]

nearest known ligand 0.00

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQ

The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Bromide SCHEMBL8425132 0.89
Fluoride Ion SCHEMBL31683058 0.89
Hydrochloric Acid SCHEMBL6846743 0.89
Iodide SCHEMBL10651168 0.89
Bromide SCHEMBL28280108 0.80
SCHEMBL1717772 0.77 TSHR (0.38)
Water SCHEMBL2310255 0.74
SCHEMBL4452545 0.74
Water SCHEMBL7125489 0.74
Potassium Ion SCHEMBL28275731 0.74

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260071095-A1 POLISHING COMPOSITION, POLISHING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE FUJIMI INCORPORATED (JP) 2026-03-12 US disclosed
US-20250320381-A1 POLISHING COMPOSITION, POLISHING METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE FUJIMI INCORPORATED (JP) 2025-10-16 US disclosed
US-20250282977-A1 POLISHING COMPOSITION, POLISHING METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE FUJIMI INCORPORATED (JP) 2025-09-11 US disclosed
US-12012658-B2 Composition, kit, and method for treating substrate FUJIFILM CORPORATION (JP) 2024-06-18 US disclosed
CN-115411454-B Lithium battery diaphragm and preparation method thereof 深圳市成晟新能源技术有限公司 2023-12-19 CN disclosed
US-20220119960-A1 COMPOSITION, KIT, AND METHOD FOR TREATING SUBSTRATE FUJIFILM CORPORATION (JP) 2022-04-21 US disclosed
US-11085011-B2 Post CMP cleaning compositions for ceria particles ENTEGRIS, INC. (US) 2021-08-10 US disclosed
CN-112771144-A POST chemical mechanical polishing (POST CMP) cleaning composition for cerium particles 恩特格里斯公司 2021-05-07 CN disclosed
WO-2021005980-A1 COMPOSITION, KIT, AND TREATMENT METHOD FOR SUBSTRATE 富士フイルム株式会社 2021-01-14 WO disclosed
WO-2020046539-A1 POST CMP CLEANING COMPOSITIONS FOR CERIA PARTICLES ENTEGRIS, INC. (US) 2020-03-05 WO disclosed
US-20200071642-A1 POST CMP CLEANING COMPOSITIONS FOR CERIA PARTICLES MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT 2020-03-05 US disclosed
US-5922826-A TRANSESTERIFICATION IN PRESENCE OF A POLYMERIZATION CATALYST CONTAINING AN ORGANONITROGEN COMPOUND AND A QUATERNARY PHOSPHONIUM SALT TO PRODUCE POLYCARBONATE IDEMITSU KOSAN CO., LTD. (JP) 1999-07-13 US disclosed
EP-0807657-A1 PROCESS FOR PRODUCING POLYCARBONATE IDEMITSU KOSAN COMPANY LIMITED (JP) 1997-11-19 EP disclosed