SCHEMBL8510093

SCHEMBL8510093

C=C(C)C(=O)OC12CC3CC(C1)CC(C(=O)OC(C(F)(F)F)C(F)(F)S(=O)(=O)[O-])(C3)C2.c1ccc(S2=c3ccccc3=[O+]c3ccccc32)cc1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8512986 0.84
SCHEMBL1318815 0.82 L3MBTL1 (0.30)
SCHEMBL15769065 0.79 ALDH1A1 (0.32)
SCHEMBL8512302 0.78
SCHEMBL3410077 0.74
SCHEMBL11964322 0.74
SCHEMBL17525031 0.74
SCHEMBL20668235 0.72 CYP17A1 (0.33)
SCHEMBL25454244 0.70 CYP17A1 (0.31)
SCHEMBL19719136 0.69

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9482949-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-11-01 US disclosed
US-9442376-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-09-13 US disclosed
US-9429843-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-30 US disclosed
US-9335633-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-05-10 US disclosed
US-9250522-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-02-02 US disclosed
US-9244350-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-01-26 US disclosed
US-9140988-B2 Positive resist composition, monomer, polymer, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-09-22 US disclosed
US-20150253666-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-09-10 US disclosed
US-20150253665-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-09-10 US disclosed
US-20150212416-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-07-30 US disclosed
US-20150212417-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-07-30 US disclosed
US-20150212415-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-07-30 US disclosed
US-9052593-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-06-09 US disclosed
US-20140162188-A1 POSITIVE RESIST COMPOSITION, MONOMER, POLYMER, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-12 US disclosed
US-8735046-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-05-27 US disclosed
US-20130323646-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-12-05 US disclosed
US-20120135349-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-31 US disclosed