SCHEMBL851839

SCHEMBL851839

O=C1OCC2CC3C4CCC(C4)C3CC12

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10327623 0.82
SCHEMBL3387123 0.80
SCHEMBL1075162 0.80
SCHEMBL14435544 0.80
SCHEMBL13309236 0.80
SCHEMBL6357085 0.78
SCHEMBL8840313 0.74 KDM4E (0.34)
SCHEMBL21396628 0.74
SCHEMBL23409268 0.73
SCHEMBL3778293 0.73

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20140127629-A1 METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2014-05-08 US disclosed
US-8338076-B2 Resist composition, method of forming resist pattern, novel compound, and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2012-12-25 US disclosed
EP-1882981-B1 POSITIVE-WORKING RESIST COMPOSITION AND METHOD FOR RESIST PATTERN FORMATION TOKYO OHKA KOGYO CO LTD (JP) 2012-12-19 EP disclosed
US-8142979-B2 Resist composition for immersion exposure and method of forming resist pattern using the same Tokyo Ohka Tokyo Co., Ltd. (JP) 2012-03-27 US disclosed
EP-1906238-B1 Photosensitive composition and pattern forming method using the same FUJIFILM CORP (JP) 2011-11-09 EP disclosed
US-8034536-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2011-10-11 US disclosed
US-8029972-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2011-10-04 US disclosed
US-7767379-B2 Polymer compound, positive resist composition, and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2010-08-03 US disclosed
US-20090311627-A1 Resist composition for immersion exposure and method of forming resist pattern using the same TOKYO OHKA KOGYO CO., LTD. 2009-12-17 US disclosed
US-20090297980-A1 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. 2009-12-03 US disclosed
US-20090269701-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-10-29 US disclosed
US-20090098484-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-04-16 US disclosed
US-20090068590-A1 POLYMER COMPOUND, POSITIVE RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-03-12 US disclosed