SCHEMBL85892

SCHEMBL85892

C=C(C)C(=O)OC(CC(O)(C(F)(F)F)C(F)(F)F)C1CC2CCC1C2

nearest known ligand 0.32

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.32
HPGD P15428 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
ALDH1A1 P00352 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13288260 0.90 LMNA (0.33) LMNAHPGDSMN1; SMN2ALDH1A1
SCHEMBL15836467 0.89 LMNA (0.32) LMNAHPGDSMN1; SMN2ALDH1A1
SCHEMBL10049071 0.83 ALDH1A1 (0.37) LMNAHPGDSMN1; SMN2ALDH1A1
SCHEMBL85908 0.81
SCHEMBL11294328 0.81 ALDH1A1 (0.38) LMNAHPGDSMN1; SMN2ALDH1A1
SCHEMBL108133 0.80 ALDH1A1 (0.33) LMNAHPGDSMN1; SMN2ALDH1A1
SCHEMBL75363 0.79 LMNA (0.34) LMNAHPGDSMN1; SMN2ALDH1A1
SCHEMBL9610652 0.78 LMNA (0.33) LMNAHPGDSMN1; SMN2ALDH1A1
SCHEMBL12309109 0.78
SCHEMBL2121091 0.78 LMNA (0.35) LMNAHPGDSMN1; SMN2ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2414896-B1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORP (JP) 2020-11-11 EP disclosed
US-9201300-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-01 US disclosed
US-8846290-B2 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2014-09-30 US disclosed
US-8846290-B2 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2014-09-30 US disclosed
US-8835098-B2 Method of forming pattern FUJIFILM CORPORATION (JP) 2014-09-16 US disclosed
US-8835098-B2 Method of forming pattern FUJIFILM CORPORATION (JP) 2014-09-16 US disclosed
US-20140178818-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-26 US disclosed
US-8574813-B2 Resist composition for immersion exposure and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2013-11-05 US disclosed
US-8574813-B2 Resist composition for immersion exposure and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2013-11-05 US disclosed
US-20130209938-A1 Fluorine-Containing Sulfonic Acid Salts, Photo-Acid Generator And Resist Composition And Pattern Formation Method Utilizing Same CENTRAL GLASS COMPANY, LTD. (JP) 2013-08-15 US disclosed
US-20100204422-A1 Fluorine-Containing Cyclic Compound, Fluorine-Containing Polymer Compound, Resist Material Using Same and Method for Forming Pattern CENTRAL GLASS COMPANY, LIMITED (JP) 2010-08-12 US disclosed
US-7736835-B2 Fluorine-containing cyclic compound, fluorine-containing polymer compound, resist material using same and method for forming pattern CENTRAL GLASS COMPANY, LIMITED (JP) 2010-06-15 US disclosed
US-7736835-B2 Fluorine-containing cyclic compound, fluorine-containing polymer compound, resist material using same and method for forming pattern CENTRAL GLASS COMPANY, LIMITED (JP) 2010-06-15 US disclosed
US-20090208886-A1 DOUBLE PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-20 US disclosed
US-20090053650-A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-02-26 US disclosed
US-20090042132-A1 RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-02-12 US disclosed
US-7402626-B2 Top coat composition CENTRAL GLASS COMPANY, LIMITED (JP) 2008-07-22 US disclosed
US-7402626-B2 Top coat composition CENTRAL GLASS COMPANY, LIMITED (JP) 2008-07-22 US disclosed
US-20080003517-A1 Fluorine-Containing Cyclic Compound, Fluorine-Containing Polymer Compound, Resist Material Using Same and Method for Forming Pattern CENTRAL GLASS COMPANY, LIMITED (JP) 2008-01-03 US disclosed
US-20080003517-A1 Fluorine-Containing Cyclic Compound, Fluorine-Containing Polymer Compound, Resist Material Using Same and Method for Forming Pattern CENTRAL GLASS COMPANY, LIMITED (JP) 2008-01-03 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100204422-A1 Fluorine-Containing Cyclic Compound, Fluorine-Containing Polymer Compound, Resist Material Using Same and Method for Forming Pattern AFF1, AFF2, FGFR1 LMNA 3016/4885HPGD 4336/4885SMN1; SMN2 1646/4885
US-20080003517-A1 Fluorine-Containing Cyclic Compound, Fluorine-Containing Polymer Compound, Resist Material Using Same and Method for Forming Pattern AFF1, AFF2, FGFR1 LMNA 3016/4885HPGD 4336/4885SMN1; SMN2 1646/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.