SCHEMBL86073

SCHEMBL86073

CCC1(OC(=O)C2CC3CCC2C3)CCCC1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HSD11B1 P28845 2/20 0.43
POLB P06746 1/20 0.41
HPGD P15428 3/20 0.36
L3MBTL1 Q9Y468 2/20 0.36
NPC1 O15118 2/20 0.36
RAB9A P51151 2/20 0.36
ALDH1A1 P00352 1/20 0.36
MAPT P10636 1/20 0.36
MAPK1 P28482 1/20 0.36
GFER P55789 1/20 0.36
GAA P10253 1/20 0.35
THRB P10828 1/20 0.35
KCNQ3 O43525 1/20 0.33
KCNQ2 O43526 1/20 0.33
KCNQ4 P56696 1/20 0.33
KCNQ5 Q9NR82 1/20 0.33
EPHX2 P34913 1/20 0.33
MEN1 O00255 1/20 0.32
KMT2A Q03164 1/20 0.32
TSHR P16473 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1410001 0.99 HSD11B1 (0.43) HSD11B1POLBHPGDL3MBTL1NPC1
SCHEMBL1105065 0.80 HSD11B1 (0.40) HSD11B1POLBHPGDL3MBTL1NPC1
SCHEMBL13564215 0.79 HSD11B1 (0.39) HSD11B1POLBHPGDL3MBTL1NPC1
SCHEMBL2380585 0.78 CYP3A4 (0.36) ALDH1A1MAPTMAPK1MEN1KMT2A
SCHEMBL15935801 0.78
SCHEMBL14428637 0.77
SCHEMBL14370456 0.77 HSD11B1 (0.43) HSD11B1POLBHPGDL3MBTL1NPC1
SCHEMBL5412685 0.75
SCHEMBL18175704 0.75
SCHEMBL785952 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 85 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230305405-A1 COMPOSITION FOR FORMING SILICON-CONTAINING METAL HARD MASK AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-28 US disclosed
US-8859180-B2 Copolymer and composition for semiconductor lithography and process for producing the copolymer MARUZEN PETROCHEMICAL CO., LTD. (JP) 2014-10-14 US disclosed
US-8859180-B2 Copolymer and composition for semiconductor lithography and process for producing the copolymer MARUZEN PETROCHEMICAL CO., LTD. (JP) 2014-10-14 US disclosed
US-8377625-B2 Method for producing a copolymer solution with a uniform concentration for semiconductor lithography MARUZEN PETROCHEMICAL CO., LTD. (JP) 2013-02-19 US disclosed
US-8211615-B2 Copolymer for immersion lithography and compositions MARUZEN PETROCHEMICAL CO., LTD. (JP) 2012-07-03 US disclosed
US-8173354-B2 Sulfonium salt, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-08 US disclosed
US-8153836-B2 Silsesquioxane compound mixture, hydrolyzable silane compound, making methods, resist composition, patterning process, and substrate processing SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-04-10 US disclosed
US-8153836-B2 Silsesquioxane compound mixture, hydrolyzable silane compound, making methods, resist composition, patterning process, and substrate processing SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-04-10 US disclosed
US-20120071638-A1 Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography MARUZEN PETROCHEMICAL CO., LTD. (JP) 2012-03-22 US disclosed
US-8129099-B2 Double patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-03-06 US disclosed
US-20070190458-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. 2007-08-16 US disclosed
US-20070122741-A1 Resist protective coating material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-31 US disclosed
US-20070099113-A1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-03 US disclosed
US-20070099113-A1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-03 US disclosed
US-20070099112-A1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-03 US disclosed
US-20070099112-A1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-03 US disclosed
EP-1780199-A1 Novel fluorohydroxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2007-05-02 EP disclosed
EP-1780198-A1 Novel fluorosulfonyloxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2007-05-02 EP disclosed
US-20070009832-A1 Fluorinated cyclic structure-bearing silicon compounds and silicone resins, resist compositions using the same, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-11 US disclosed
EP-1741705-A1 Fluorinated cyclic structure-bearing silicon compounds and silicone resins, resist compositions using the same, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2007-01-10 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120071638-A1 Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography FRG1, H1-10, POLL HSD11B1 1675/4885POLB 456/4885HPGD 2761/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.