Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HSD11B1 | P28845 | 2/20 | 0.40 |
| ▸ | POLB | P06746 | 1/20 | 0.40 |
| ▸ | SCN1A | P35498 | 1/20 | 0.36 |
| ▸ | SCN2A | Q99250 | 1/20 | 0.36 |
| ▸ | SCN3A | Q9NY46 | 1/20 | 0.36 |
| ▸ | KCNQ3 | O43525 | 1/20 | 0.35 |
| ▸ | KCNQ2 | O43526 | 1/20 | 0.35 |
| ▸ | KCNQ4 | P56696 | 1/20 | 0.35 |
| ▸ | KCNQ5 | Q9NR82 | 1/20 | 0.35 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.35 |
| ▸ | GAA | P10253 | 1/20 | 0.35 |
| ▸ | THRB | P10828 | 1/20 | 0.35 |
| ▸ | NPC1 | O15118 | 3/20 | 0.34 |
| ▸ | RAB9A | P51151 | 3/20 | 0.34 |
| ▸ | MEN1 | O00255 | 2/20 | 0.34 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.34 |
| ▸ | HPGD | P15428 | 2/20 | 0.33 |
| ▸ | TSHR | P16473 | 1/20 | 0.33 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.33 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13564215 | 0.98 | HSD11B1 (0.39) | HSD11B1POLBSCN1ASCN2ASCN3A | |
| SCHEMBL17929069 | 0.83 | SCN1A (0.38) | SCN1ASCN2ASCN3A | |
| SCHEMBL86073 | 0.80 | HSD11B1 (0.43) | HSD11B1POLBKCNQ3KCNQ2KCNQ4 | |
| SCHEMBL1410001 | 0.79 | HSD11B1 (0.43) | HSD11B1POLBKCNQ3KCNQ2KCNQ4 | |
| SCHEMBL18266770 | 0.79 | SCN1A (0.37) | SCN1ASCN2ASCN3A | |
| SCHEMBL2065930 | 0.76 | HSD11B1 (0.39) | HSD11B1POLBKCNQ3KCNQ2KCNQ4 | |
| SCHEMBL2380571 | 0.75 | CYP19A1 (0.38) | HSD11B1SCN1ASCN2ASCN3AHPGD | |
| SCHEMBL15935847 | 0.75 | SCN1A (0.40) | SCN1ASCN2ASCN3A | |
| SCHEMBL22319314 | 0.75 | SCN1A (0.35) | SCN1ASCN2ASCN3A | |
| SCHEMBL16579397 | 0.75 | SCN1A (0.35) | SCN1ASCN2ASCN3A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 98 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230305405-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING METAL HARD MASK AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-28 | — | — | US | disclosed |
| US-20230305405-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING METAL HARD MASK AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-28 | — | — | US | disclosed |
| US-20230242467-A1 | HIGH PURITY 4-HYDROXYSTYRENE SOLUTION, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING 4-HYDROXYSTYRENE POLYMER | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2023-08-03 | — | — | US | disclosed |
| US-20230244149-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-08-03 | — | — | US | disclosed |
| US-20230244149-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-08-03 | — | — | US | disclosed |
| US-20210026246-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-01-28 | — | — | US | disclosed |
| US-20190258160-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-08-22 | — | — | US | disclosed |
| US-20180081272-A1 | THERMAL CROSSLINKING ACCELERATOR, POLYSILOXANE-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SAME, AND PATTERNING PROCESS USING SAME | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-03-22 | — | — | US | disclosed |
| US-20180081272-A1 | THERMAL CROSSLINKING ACCELERATOR, POLYSILOXANE-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SAME, AND PATTERNING PROCESS USING SAME | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-03-22 | — | — | US | disclosed |
| US-9902875-B2 | Composition for forming a coating type BPSG film, substrate, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-27 | — | — | US | disclosed |
| US-20090081598-A1 | FUNCTIONALIZED CARBOSILANE POLYMERS AND PHOTORESIST COMPOSITIONS CONTAINING THE SAME | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-03-26 | — | — | US | disclosed |
| US-20090081597-A1 | generating a resist image with polycarbosilanes as acid generator, having acid labile functionality; high refractive index (n>1.7) and absorbance at 193 nm that is relatively low (A<3.00 mu m-1); aqueous base soluble; suitable for use immersion lithography | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-03-26 | — | — | US | disclosed |
| US-20090081579-A1 | FUNCTIONALIZED CARBOSILANE POLYMERS AND PHOTORESIST COMPOSITIONS CONTAINING THE SAME | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-03-26 | — | — | US | disclosed |
| US-20090081585-A1 | FUNCTIONALIZED CARBOSILANE POLYMERS AND PHOTORESIST COMPOSITIONS CONTAINING THE SAME | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-03-26 | — | — | US | disclosed |
| US-20090081585-A1 | FUNCTIONALIZED CARBOSILANE POLYMERS AND PHOTORESIST COMPOSITIONS CONTAINING THE SAME | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-03-26 | — | — | US | disclosed |
| US-20080311514-A1 | SILSESQUIOXANE COMPOUND MIXTURE, HYDROLYZABLE SILANE COMPOUND, MAKING METHODS, RESIST COMPOSITION, PATTERNING PROCESS, AND SUBSTRATE PROCESSING | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-12-18 | — | — | US | disclosed |
| US-20080311514-A1 | SILSESQUIOXANE COMPOUND MIXTURE, HYDROLYZABLE SILANE COMPOUND, MAKING METHODS, RESIST COMPOSITION, PATTERNING PROCESS, AND SUBSTRATE PROCESSING | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-12-18 | — | — | US | disclosed |
| US-20080038664-A1 | Silsesquioxane compound mixture, method of making, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO. LTD. (JP) | 2008-02-14 | — | — | US | disclosed |
| US-7265234-B2 | Silsesquioxane compound mixture, method of making, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-09-04 | — | — | US | disclosed |
| US-7265234-B2 | Silsesquioxane compound mixture, method of making, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-09-04 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20080311514-A1 | SILSESQUIOXANE COMPOUND MIXTURE, HYDROLYZABLE SILANE COMPOUND, MAKING METHODS, RESIST COMPOSITION, PATTERNING PROCESS, AND SUBSTRATE PROCESSING | STS, LSS, SRMS | HSD11B1 221/4885POLB 841/4885SCN1A 1543/4885 |
| US-20230242467-A1 | HIGH PURITY 4-HYDROXYSTYRENE SOLUTION, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING 4-HYDROXYSTYRENE POLYMER | HAAO, HPD, IL4 | HSD11B1 9/4885POLB 1617/4885SCN1A 1268/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.